rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    non sort: The
    title: Piezojunction Effect in Silicon Integrated Circuits and Sensors
  name:
    name part: Fruett, Fabiano.
    role:
      role term: creator
    role:
      role term: author.
  name:
    name part: Meijer, Gerard C. M.
    role:
      role term: author.
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: xxu
    date issued: 2002
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: XII, 162 p. online resource.
  abstract: Mechanical stress affects the magnitude of base-emitter voltages of forward biased bipolar transistors. This phenomenon is called the piezojunction effect. The piezojunction effect is the main cause of inaccuracy and drift in integrated temperature sensors and bandgap voltage references. The aim of The Piezojunction Effect in Silicon Integrated Circuits and Sensors is twofold. Firstly, to describe techniques that can reduce the mechanical-stress-induced inaccuracy and long-term instability. Secondly, to show, that the piezojunction effect can be applied for new types of mechanical-sensor structures. During IC fabrication and packaging thermo-mechanical stress is induced, when the packaged chips cool down to the temperature of application. The piezojunction effect is caused by a stress-induced change in the conductivity of the minority-charge carriers, while the piezoresistive effect is caused by a similar effect for the majority-charge carriers. To characterise the anisotropic piezojunction effect, the authors performed systematic investigations over wide ranges of mechanical stress and temperature. The experiments have been performed for various crystal and stress orientations. The experimental results have been used to extract the first- and second-order piezojunction (FOPJ and SOPJ) coefficients for bipolar transistors. It is shown how the knowledge of the piezojunction and piezoresistive coefficients can used to minimize the undesirable mechanical-stress effects on the electrical characteristics of transistors and resistors, respectively. Devices with lower mechanical-stress sensitivity can be found by comparing their piezo-coefficients. The layout of the device can also be optimized to reduce the mechanical-stress sensitivity. As a next step it is shown, how the knowledge of the piezo-effects on device level can be used to predict and to reduce their negative influence on circuit level. This is demonstrated for a number of important basic circuits, including tr…
  table of contents: Mechanical stress in integrated circuits -- Piezo effects in silicon -- Characterization of the piezojunction effect -- Minimizing the piezojunction and piezoresistive effects in integrated devices -- Minimizing the inaccuracy in packaged integrated circuits -- Stress-sensing elements based on the piezojunction effect -- Conclusions.
  note: by Fabiano Fruett, Gerard C. M. Meijer.
  subject:
    topic: Engineering
  subject:
    topic: Electrical engineering
  subject:
    topic: Electronic circuits
  subject:
    topic: Optical materials
  subject:
    topic: Electronic materials
  subject:
    topic: Engineering
  subject:
    topic: Circuits and Systems
  subject:
    topic: Electrical Engineering
  subject:
    topic: Optical and Electronic Materials
  classification: TK7888.4
  classification: 621.3815
  related item:
    title info:
      title: Springer eBooks
  related item:
    title info:
      title: The International Series in Engineering and Computer Science, Analog Circuits and Signal Processing, 682
  identifier: 9780306482106
  identifier: http://dx.doi.org/10.1007/b101922
  record info:
    record creation date: 100301
    record change date: 20151204183956.0
    record identifier: 978-0-306-48210-6