rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Nanoscale Transistors
    sub title: Device Physics, Modeling and Simulation
  name:
    name part: Lundstrom, Mark S.
    role:
      role term: creator
    role:
      role term: author.
  name:
    name part: Guo, Jing.
    role:
      role term: author.
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: xxu
    date issued: 2006
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: VIII, 218 p. 106 illus. online resource.
  abstract: NANOSCALE TRANSISTORS: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. Chapter 1 reviews some basic concepts, and Chapter 2 summarizes the essentials of traditional semiconductor devices, digital circuits, and systems. This material provides a baseline against which new devices can be assessed. Chapters 3 and 4 present a non-traditional view of the MOSFET using concepts that are valid at nanoscale. Chapter 5 applies the same concepts to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. Chapter 6 explores the limits of devices by discussing conduction in single molecules. The book is a useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices.
  table of contents: Basic Concepts -- Devices, Circuits, and Systems -- The Ballistic Nanotransistor -- Scattering Theory of the MOSFET -- Nanowire Field-Effect Transistors -- Transistors at the Molecular Scale.
  note: by Mark S. Lundstrom, Jing Guo.
  subject:
    topic: Engineering
  subject:
    topic: Condensed matter
  subject:
    topic: Solid state physics
  subject:
    topic: Spectroscopy
  subject:
    topic: Microscopy
  subject:
    topic: Electronics
  subject:
    topic: Microelectronics
  subject:
    topic: Optical materials
  subject:
    topic: Electronic materials
  subject:
    topic: Nanotechnology
  subject:
    topic: Engineering
  subject:
    topic: Electronics and Microelectronics, Instrumentation
  subject:
    topic: Nanotechnology
  subject:
    topic: Solid State Physics
  subject:
    topic: Spectroscopy and Microscopy
  subject:
    topic: Optical and Electronic Materials
  subject:
    topic: Condensed Matter Physics
  classification: TK7800-8360
  classification: TK7874-7874.9
  classification: 621.381
  related item:
    title info:
      title: Springer eBooks
  identifier: 9780387280035
  identifier: http://dx.doi.org/10.1007/0-387-28003-0
  record info:
    record creation date: 100301
    record change date: 20151204154618.0
    record identifier: 978-0-387-28003-5