rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Physical Limitations of Semiconductor Devices
  name:
    name part: Vashchenko, V. A.
    role:
      role term: creator
    role:
      role term: author.
  name:
    name part: Sinkevitch, V. F.
    role:
      role term: author.
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: xxu
    date issued: 2008
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: XIII, 330 p. online resource.
  abstract: Physical Limitations of Semiconductor Devices provides an in depth understanding of the phenomena and regularities that play a critical role in the limitation of semiconductor device capabilities. It discusses how thermo-electrical breakdown, conductivity modulation, and electrical and spatial current instability phenomena affect the limitations of the devices. The authors give examples of the phenomena ranging from elementary semiconductor diode structures to discrete power and integrated components. They also show circuits both for silicon and compound semiconductor devices. The material covers different levels of complexity including phenomenological, analytical, and numerical simulation. The material also explores the most complex phenomena of current filamentation and the impact of local structure defects, physical safe operating area limitations, and various scenarios of catastrophic failures in semiconductor devices. The emphasis of the book is on the physical approach to reliability assurance, safe operating area, and ESD problems. Physical Limitations of Semiconductor Devices provides an important link between the theoretical aspects of the physics of semiconductor devices, non-linear physics, and the practical applications of microelectronics.
  table of contents: Failures of Semiconductor Device -- Theoretical Basis of Current Instability in Transistor Structures -- Thermal Instability Mechanism -- Isothermal Current Instability in Silicon BJT and MOSFETs -- Isothermal Instability in Compound Semiconductor Devices -- Degradation Instabilities -- Conductivity Modulation in ESD devices -- Physical Approach to Reliability.
  note: by V. A. Vashchenko, V. F. Sinkevitch.
  subject:
    topic: Engineering
  subject:
    topic: Solid state physics
  subject:
    topic: Spectroscopy
  subject:
    topic: Microscopy
  subject:
    topic: Electronics
  subject:
    topic: Microelectronics
  subject:
    topic: Electronic circuits
  subject:
    topic: Optical materials
  subject:
    topic: Electronic materials
  subject:
    topic: Engineering
  subject:
    topic: Electronics and Microelectronics, Instrumentation
  subject:
    topic: Solid State Physics
  subject:
    topic: Spectroscopy and Microscopy
  subject:
    topic: Circuits and Systems
  subject:
    topic: Optical and Electronic Materials
  subject:
    topic: Engineering, general
  classification: TK7800-8360
  classification: TK7874-7874.9
  classification: 621.381
  related item:
    title info:
      title: Springer eBooks
  identifier: 9780387745145
  identifier: http://dx.doi.org/10.1007/978-0-387-74514-5
  record info:
    record creation date: 100301
    record change date: 20151204180201.0
    record identifier: 978-0-387-74514-5