rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Device Applications of Silicon Nanocrystals and Nanostructures
  name:
    name part: Koshida, Nobuyoshi.
    role:
      role term: editor.
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: xxu
    date issued: 2009
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: XII, 344 p. online resource.
  abstract: Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI. Key Features: Offers the first comprehensive treatment of recent advances in quantum-sized silicon device technology Presents systematic and vivid descriptions from a technological viewpoint, providing a realistic perspective on forthcoming silicon device concepts in the post-scaling era Shows how silicon nanocrystal technology is fundamental to the future of silicon electronics, optoelectronics, and photonics Reviews optimal strategies for developing the next generation of devices for microelectronics, photonics, acoustics, and biology.
  table of contents: Si-Rich Dielectrics for Active Photonic Devices -- Nanocrystalline Si EL Devices -- Surface and Superlattice -- Optical Gain and Lasing in Low Dimensional Silicon: The Quest for an Injection Laser -- Silicon Single-Electron Devices -- Room Temperature Silicon Spin-Based Transistors -- Electron Transport in Nanocrystalline Silicon -- Silicon Nanocrystal Nonvolatile Memories -- Nanocrystalline Silicon Ballistic Electron Emitter -- Porous Silicon Optical Label-Free Biosensors -- Ultrasonic Emission from Nanocrystalline Porous Silicon.
  note: edited by Nobuyoshi Koshida.
  subject:
    topic: Materials science
  subject:
    topic: Superconductivity
  subject:
    topic: Superconductors
  subject:
    topic: Optical materials
  subject:
    topic: Electronic materials
  subject:
    topic: Nanotechnology
  subject:
    topic: Materials Science
  subject:
    topic: Nanotechnology
  subject:
    topic: Optical and Electronic Materials
  subject:
    topic: Strongly Correlated Systems, Superconductivity
  classification: T174.7
  classification: TA418.9.N35
  classification: 620.115
  related item:
    title info:
      title: Springer eBooks
  related item:
    title info:
      title: Nanostructure Science and Technology
  identifier: 9780387786896
  identifier: http://dx.doi.org/10.1007/978-0-387-78689-6
  record info:
    record creation date: 100301
    record change date: 20151125201056.0
    record identifier: 978-0-387-78689-6