rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Defects in High-k Gate Dielectric Stacks
    sub title: Nano-Electronic Semiconductor Devices
  title info:
    title: Proceedings of the NATO Advanced Research Workshop on Defects in Advanced High-K Dielectric Nano-Electronic Semiconductor Devices, St. Petersburg, Russia, from 11 to 14 July 2005
  name:
    name part: Gusev, Evgeni.
    role:
      role term: editor.
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: ne
    date issued: 2006
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: XI, 492 p. online resource.
  abstract: The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.
  table of contents: PVD-HIGH-K GATE DIELECTRICS WITH FUSI GATE AND INFLUENCE OF PDA TREATMENT ON ON-STATE DRIVE CURRENT -- EXTREMELY HIGH-DENSITY CAPACITORS WITH ALD HIGH-K DIELECTRIC LAYERS -- TOWARDS UNDERSTANDING OF PROCESSINGNANOSTRUCTURE- PROPERTY INTER-RELATIONSHIPS IN HIGHK/METAL GATE STACKS -- ON THE CHARACTERIZATION OF ELECTRONICALLY ACTIVE DEFECTS IN HIGH-? GATE DIELECTRICS -- INELASTIC ELECTRON TUNNELLING SPECTROSCOPY (IETS) STUDY OF HIGH-K DIELECTRICS -- CHARACTERIZATION AND MODELING OF DEFECTS IN HIGH-K MEASUREMENTS LAYERS THROUGH FAST ELECTRICAL TRANSIENT -- CHARACTERIZATION OF ELECTRICALLY ACTIVE DEFECTS IN HIGH-K GATE DIELECTRICS USING CHARGE PUMPING -- IMPACT OF HIGH-? PROPERTIES ON MOSFET ELECTRICAL CHARACTERISTICS -- STRUCTURAL EVOLUTION AND POINT DEFECTS IN METAL OXIDE-BASED HIGH-? GATE DIELECTRICS -- DISORDERED STRUCTURE AND DENSITY OF GAP STATES IN HIGH-PERMITTIVITY THIN SOLID FILMS -- INTERDIFFUSION STUDIES OF HIGH-K GATE DIELECTRIC STACK CONSTITUENTS -- XPS/LEIS STUDY OF HIGH-K RARE EARTH (LU, YB) OXIDES AND SILICATES ON SI: THE EFFECT OF ANNEALING ON MICROSTRUCTURE EVOLUTION -- TRANSIENT CHARGING EFFECTS AND ITS IMPLICATIONS TO THE RELIABILITY OF HIGH-K DIELECTRICS -- DEFECT ENERGY LEVELS IN HIGH-K GATE OXIDES -- DEFECT-RELATED ISSUES IN HIGH-K DIELECTRICS -- STUDYING THE EFFECTS OF NITROGEN AND HAFNIUM INCORPORATION INTO THE SIO2/SI(100) INTERFACE WITH REPLICA-EXCHANGE MOLECULAR DYNAMICS AND DENSITYFUNCTIONAL- THEORY CALCULATIONS -- PROBING POINT DEFECTS AND TRAPS IN STACKS OF ULTRATHIN HAFNIUM OXIDES ON (100)SI BY ELECTRON SPIN RESONANCE: INTERFACES AND N INCORPORATION -- MECHANISM OF CHARGE TRAPPING REDUCTION IN SCALED HIGH-? GATE STACKS -- ELECTRICALLY ACTIVE INTERFACE AND BULK SEMICONDUCTOR DEFECTS IN HIGH-K / GERMANIUM STRUCTURES -- DEFECT AND COMPOSITION ANALYSIS OF AS-DEPOSITED AND NITRIDED (100)SI / SIO2/ HF1-XSIXO2 STACKS BY ELECTRON PARAMAGNETIC RESONANCE AND ION BEAM ANALYSIS -- DEFECTS AT THE HIGH-? /SEMICONDUCTOR INTERFACES INVESTIGATED BY SPIN DE…
  note: edited by Evgeni Gusev.
  subject:
    topic: Engineering
  subject:
    topic: Condensed matter
  subject:
    topic: Electrical engineering
  subject:
    topic: Electronics
  subject:
    topic: Microelectronics
  subject:
    topic: Engineering
  subject:
    topic: Electrical Engineering
  subject:
    topic: Condensed Matter Physics
  subject:
    topic: Engineering, general
  subject:
    topic: Electronics and Microelectronics, Instrumentation
  classification: TK1-9971
  classification: 621.3
  related item:
    title info:
      title: Springer eBooks
  related item:
    title info:
      title: NATO Science Series II: Mathematics, Physics and Chemistry, 220
  identifier: 9781402043673
  identifier: http://dx.doi.org/10.1007/1-4020-4367-8
  record info:
    record creation date: 100301
    record change date: 20151204143537.0
    record identifier: 978-1-4020-4367-3