rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Nanoscaled Semiconductor-on-Insulator Structures and Devices
  title info:
    title: Proceedings of the NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices, Big Yalta, Ukraine, 15-19 October 2006
  name:
    name part: Hall, Steve.
    role:
      role term: editor.
  name:
    name part: Nazarov, Alexei N.
    role:
      role term: editor.
  name:
    name part: Lysenko, Vladimir S.
    role:
      role term: editor.
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: ne
    date issued: 2007
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: XIII, 369 p. online resource.
  abstract: This proceedings volume constitutes an archive of the contributions of the key-speakers who attended the NATO Advanced Research Workshop on “Nanoscaled Semiconductor-On-Insulator Structures and devices” held in the Tourist and Recreation Centre “Sudak” (Crimea, Ukraine) from 15 to 19 October 2006. The semiconductor industry has sustained a very rapid growth during the last three decades through impressive technological developments which have resulted in products with higher performance and lower cost per function. After many years of development it is now confidently predicted that semiconductor-on-insulator materials will enter and increasingly be used by manufacturing industry. The wider use of semiconductor (es- cially silicon) on insulator materials will not only enable the benefits of these materials to be demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. Thus the semiconductor-on-insulator materials of today are not only the basis for modern microelectronics but also for future nanoscale devices and ICs. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe. Indeed, one of the goals of this Workshop is to promote the development of SOI technologies worldwide.
  table of contents: Nanoscaled SOI Material and Device Technologies -- Status and trends in SOI nanodevices -- Non-Planar Devices for Nanoscale CMOS -- High-? Dielectric Stacks for Nanoscaled SOI Devices -- Nanoscaled Semiconductor Heterostructures for CMOS Transistors Formed by Ion Implantation and Hydrogen Transfer -- Fluorine –Vacancy Engineering: A Viable Solution for Dopant Diffusion Suppression in SOI Substrates -- Suspended Silicon-On-Insulator Nanowires for the Fabrication of Quadruple Gate MOSFETs -- Physics of Novel Nanoscaled SemOI Devices -- Integration of silicon Single-Electron Transistors Operating at Room Temperature -- SiGe Nanodots in Electro-Optical SOI Devices -- Nanowire Quantum Effects in Trigate SOI MOSFETs -- Semiconductor Nanostructures and Devices -- MuGFET CMOS Process with Midgap Gate Material -- Doping Fluctuation Effects in Multiple-Gate SOI MOSFETs -- SiGeC HBTs: impact of C on Device Performance -- Reliability and Characterization of Nanoscaled SOI Devices -- Noise Research of Nanoscaled SOI Devices -- Electrical Characterization and Special Properties of FINFET Structures -- Substrate Effect on the Output Conductance Frequency Response of SOI MOSFETs -- Investigation of Compressive Strain Effects Induced by STI and ESL -- Charge Trapping Phenomena in Single Electron NVM SOI Devices Fabricated by a Self-Aligned Quantum DOT Technology -- Theory and Modeling of Nanoscaled Devices -- Variability in Nanoscale UTB SOI Devices and its Impact on Circuits and Systems -- Electron Transport in Silicon-on-Insulator Nanodevices -- All Quantum Simulation of Ultrathin SOI MOSFETs -- Resonant Tunneling Devices on SOI Basis -- Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions -- Three-Dimensional (3-D) Analytical Modeling of the Threshold Voltage, DIBL and Subthreshold Swing of Cylindrical Gate all Around Mosfets.
  note: edited by Steve Hall, Alexei N. Nazarov, Vladimir S. Lysenko.
  subject:
    topic: Materials science
  subject:
    topic: Electrical engineering
  subject:
    topic: Electronics
  subject:
    topic: Microelectronics
  subject:
    topic: Optical materials
  subject:
    topic: Electronic materials
  subject:
    topic: Nanotechnology
  subject:
    topic: Materials Science
  subject:
    topic: Optical and Electronic Materials
  subject:
    topic: Nanotechnology
  subject:
    topic: Electrical Engineering
  subject:
    topic: Electronics and Microelectronics, Instrumentation
  classification: TA1750-1750.22
  classification: 620.11295
  classification: 620.11297
  related item:
    title info:
      title: Springer eBooks
  related item:
    title info:
      title: NATO Science for Peace and Security Series B: Physics and Biophysics
  identifier: 9781402063800
  identifier: http://dx.doi.org/10.1007/978-1-4020-6380-0
  record info:
    record creation date: 100301
    record change date: 20151204185136.0
    record identifier: 978-1-4020-6380-0