rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Si Detectors and Characterization for HEP and Photon Science Experiment
    sub title: How to Design Detectors by TCAD Simulation
  name:
    name part: Srivastava, Ajay Kumar.
    role:
      role term: creator
    role:
      role term: author.
    role:
      role term: aut
    role:
      role term: http://id.loc.gov/vocabulary/relators/aut
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: gw
    date issued: 2019
    edition: 1st ed. 2019.
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: XVII, 183 p. 106 illus., 77 illus. in color. online resource.
  abstract: This book reviews the HL-LHC experiments and the fourth-generation photon science experiments, discussing the latest radiation hardening techniques, optimization of device & process parameters using TCAD simulation tools, and the experimental characterization required to develop rad-hard Si detectors for x-ray induced surface damage and bulk damage by hadronic irradiation. Consisting of eleven chapters, it introduces various types of strip and pixel detector designs for the current upgrade, radiation, and dynamic range requirement of the experiments, and presents an overview of radiation detectors, especially Si detectors. It also describes the design of pixel detectors, experiments and characterization of Si detectors. The book is intended for researchers and master's level students with an understanding of radiation detector physics. It provides a concept that uses TCAD simulation to optimize the electrical performance of the devices used in the harsh radiation environment of the colliders and at XFEL. .
  table of contents: Development OF Si DETECTORS FOR THE CMS LHC Experiments -- Physics and Technology of Si Detectors.-Performance of MCz Si Material for p+nn+ and n+pp+ Si Sensor Design: Status and Development for HL-LHC: Status and Development for HL-LHC -- Development OF RADIATION HARD PIXEL DETECTORS FOR THE EUROPEAN XFEL -- T-CAD Simulation for the designing of detectors -- Development of Radiation Hard p+n Si Pixel Sensors for the European XFEL -- Analysis & Optimal Design of Radiation Hard p+n Si Pixel Detector for the Next generation Photon Science Experiments -- CapacitanceS in p+n silicon pixel sensors using 3-D TCAD simulation approach.-CHARACTERIZATION OF SI DETECTORS -- Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL -- Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation -- Appendices.
  note: by Ajay Kumar Srivastava.
  subject:
    topic: Particle acceleration
  subject:
    topic: Computer-aided engineering
  subject:
    topic: Physical measurements
  subject:
    topic: Measurement
  subject:
    topic: Solid state physics
  subject:
    topic: Materials science
  subject:
    topic: Nuclear physics
  subject:
    topic: Heavy ions
  subject:
    topic: Particle Acceleration and Detection, Beam Physics
  subject:
    topic: Computer-Aided Engineering (CAD, CAE) and Design
  subject:
    topic: Measurement Science and Instrumentation
  subject:
    topic: Solid State Physics
  subject:
    topic: Characterization and Evaluation of Materials
  subject:
    topic: Nuclear Physics, Heavy Ions, Hadrons
  classification: QC770-798
  classification: 539.73
  related item:
    title info:
      title: Springer eBooks
  identifier: 9783030195311
  identifier: https://doi.org/10.1007/978-3-030-19531-1
  record info:
    record creation date: 190913
    record change date: 20191220130851.0
    record identifier: 978-3-030-19531-1