rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: GaP Heteroepitaxy on Si(100)
    sub title: Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients
  name:
    name part: Döscher, Henning.
    role:
      role term: creator
    role:
      role term: author.
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: gw
    date issued: 2013
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: XIV, 143 p. 80 illus., 33 illus. in color. online resource.
  abstract: Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.
  table of contents: Introduction -- Experimental -- Si(100) surfaces in chemical vapor environments -- GaP(100) and InP(100) surfaces -- GaP growth on Si(100) and anti-phase disorder -- Conclusion.
  note: by Henning Döscher.
  subject:
    topic: Physics
  subject:
    topic: Semiconductors
  subject:
    topic: Optics
  subject:
    topic: Optoelectronics
  subject:
    topic: Plasmons (Physics)
  subject:
    topic: Optical materials
  subject:
    topic: Electronic materials
  subject:
    topic: Physics
  subject:
    topic: Semiconductors
  subject:
    topic: Optics, Optoelectronics, Plasmonics and Optical Devices
  subject:
    topic: Optical and Electronic Materials
  classification: QC610.9-611.8
  classification: 537.622
  related item:
    title info:
      title: Springer eBooks
  related item:
    title info:
      title: Springer Theses, Recognizing Outstanding Ph.D. Research
  identifier: 9783319028804
  identifier: http://dx.doi.org/10.1007/978-3-319-02880-4
  record info:
    record creation date: 131128
    record change date: 20151204182702.0
    record identifier: 978-3-319-02880-4