rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Emerging Resistive Switching Memories
  name:
    name part: Ouyang, Jianyong.
    role:
      role term: creator
    role:
      role term: author.
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: gw
    date issued: 2016
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: VIII, 93 p. 73 illus., 41 illus. in color. online resource.
  abstract: This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
  table of contents: Introduction to history of memory devices and the present memory devices -- Introduction of resistive switches memory devices with nanoparticles -- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode -- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode -- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles -- Mechanisms for resistive switches -- Application of the resistive switching devices with nanoparticles.
  note: by Jianyong Ouyang.
  subject:
    topic: Materials science
  subject:
    topic: Computer memory systems
  subject:
    topic: Electronic circuits
  subject:
    topic: Electronics
  subject:
    topic: Microelectronics
  subject:
    topic: Nanotechnology
  subject:
    topic: Materials Science
  subject:
    topic: Nanotechnology
  subject:
    topic: Electronic Circuits and Devices
  subject:
    topic: Electronics and Microelectronics, Instrumentation
  subject:
    topic: Memory Structures
  classification: T174.7
  classification: TA418.9.N35
  classification: 620.115
  related item:
    title info:
      title: Springer eBooks
  related item:
    title info:
      title: SpringerBriefs in Materials
  identifier: 9783319315720
  identifier: http://dx.doi.org/10.1007/978-3-319-31572-0
  record info:
    record creation date: 160704
    record change date: 20160704144336.0
    record identifier: 978-3-319-31572-0