rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Piezoresistive Effect of p-Type Single Crystalline 3C-SiC
    sub title: Silicon Carbide Mechanical Sensors for Harsh Environments
  name:
    name part: Phan, Hoang-Phuong.
    role:
      role term: creator
    role:
      role term: author.
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: gw
    date issued: 2017
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: XXI, 146 p. 94 illus., 3 illus. in color. online resource.
  abstract: This book addresses the piezoresistance in p-type 3C-SiC, which it investigates using experimental characterization and theoretical analysis. The gauge factor, the piezoresistive coefficients in two-terminal and four-terminal resistors, the comparison between single crystalline and nanocrystalline SiC, along with the temperature dependence of the piezoresistive effect in p-type 3C-SiC are also discussed. Silicon carbide (SiC) is an excellent material for electronic devices operating at high temperatures, thanks to its large energy band gap, superior mechanical properties and extreme chemical inertness. Among the numerous poly types of SiC, the cubic single crystal, which is also well known as 3C-SiC, is the most promising platform for microelectromechanical (MEMS) applications, as it can be epitaxially grown on an Si substrate with diameters of up to several hundred millimeters. This feature makes 3C-SiC compatible with the conventional Si-based micro/nano processing and also cuts down the cost of SiC wafers. The investigation into the piezoresistive effect in 3CSiC is of significant interest for the development of mechanical transducers such as pressure sensors and strain sensors used for controlling combustion and deep well drilling. Although a number of studies have focused on the piezoresistive effect in n-type 3C-SiC, 4H-SiC and 6H-SiC, comparatively little attention has been paid to piezoresistance in p-type 3C-SiC. In addition, the book investigates the piezoresistive effect of top-down fabricated SiC nanowires, revealing a high degree of sensitivity in nanowires employing an innovative nano strain-amplifier. The large gauge factors of the p-type 3C-SiC at both room temperature and high temperatures found here indicate that this poly type could be suitable for the development of mechanical sensing devices operating in harsh environments with high temperatures.iv>.
  table of contents: Introduction and Literature Review -- Theory of the Piezoresistive Eﬀect in p-type 3C-Sic -- 3C-Sic Film Growth and Sample Preparation -- Characterization of the Piezoresistive Eﬀect in p-type Single Crystalline 3C-Sic -- The Piezoresistive Eﬀect in p-type Nanocrystalline Sic -- The Piezoresistive Eﬀect of Top Down p-type 3C-Sic Nanowires -- Conclusion and Future Work.
  note: by Hoang-Phuong Phan.
  subject:
    topic: Materials science
  subject:
    topic: Solid state physics
  subject:
    topic: Electronics
  subject:
    topic: Microelectronics
  subject:
    topic: Optical materials
  subject:
    topic: Electronic materials
  subject:
    topic: Materials Science
  subject:
    topic: Optical and Electronic Materials
  subject:
    topic: Electronics and Microelectronics, Instrumentation
  subject:
    topic: Solid State Physics
  classification: TA1750-1750.22
  classification: 620.11295
  classification: 620.11297
  related item:
    title info:
      title: Springer eBooks
  related item:
    title info:
      title: Springer Theses, Recognizing Outstanding Ph.D. Research
  identifier: 9783319555447
  identifier: http://dx.doi.org/10.1007/978-3-319-55544-7
  record info:
    record creation date: 170412
    record change date: 20170412151333.0
    record identifier: 978-3-319-55544-7