rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
  name:
    name part: Meneghesso, Gaudenzio.
    role:
      role term: editor.
    role:
      role term: edt
    role:
      role term: http://id.loc.gov/vocabulary/relators/edt
  name:
    name part: Meneghini, Matteo.
    role:
      role term: editor.
    role:
      role term: edt
    role:
      role term: http://id.loc.gov/vocabulary/relators/edt
  name:
    name part: Zanoni, Enrico.
    role:
      role term: editor.
    role:
      role term: edt
    role:
      role term: http://id.loc.gov/vocabulary/relators/edt
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: gw
    date issued: 2018
    edition: 1st ed. 2018.
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: XIII, 232 p. 183 illus., 165 illus. in color. online resource.
  abstract: This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
  table of contents: Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics -- Chapter2: Lateral GaN HEMT structures -- Chapter3: Vertical GaN Transistors for Power Electronics -- Chapter4: Reliability of GaN-based Power devices -- Chapter5: Validating GaN robustness -- Chapter6: Impact of Parasitics on GaN Based Power Conversion -- Chapter7: GaN in AC/DC Power Converters -- Chapter8: GaN in Switched Mode Power Amplifiers.
  note: edited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni.
  subject:
    topic: Electronic circuits
  subject:
    topic: Optical materials
  subject:
    topic: Electronic materials
  subject:
    topic: Circuits and Systems
  subject:
    topic: Electronic Circuits and Devices
  subject:
    topic: Optical and Electronic Materials
  classification: TK7888.4
  classification: 621.3815
  related item:
    title info:
      title: Springer eBooks
  related item:
    title info:
      title: Integrated Circuits and Systems
  identifier: 9783319779942
  identifier: https://doi.org/10.1007/978-3-319-77994-2
  record info:
    record creation date: 180512
    record change date: 20191024182343.0
    record identifier: 978-3-319-77994-2