rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Fundamentals of Power Semiconductor Devices
  name:
    name part: Baliga, B. Jayant.
    role:
      role term: creator
    role:
      role term: author.
    role:
      role term: aut
    role:
      role term: http://id.loc.gov/vocabulary/relators/aut
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: gw
    date issued: 2019
    edition: 2nd ed. 2019.
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: XXXII, 1086 p. 838 illus., 559 illus. in color. online resource.
  abstract: This textbook provides an in-depth treatment of the physics of power semiconductor devices that are commonly used by the power electronics industry. Drawing upon decades of industry and teaching experience and using numerous examples and illustrative applications, the author discusses in detail the various device performance attributes that allow practicing engineers to develop energy-efficient products. Coverage includes all types of power rectifiers and transistors and analytical models for explaining the operation of all power semiconductor devices are developed and demonstrated in each section of the book. Throughout the book, emphasis is placed on deriving simple analytical expressions that describe the underlying physics and enable representation of the device electrical characteristics. This treatment is invaluable for teaching a course on power devices because it allows the operating principles and concepts to be conveyed with quantitative analysis. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. This new edition also includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions. Provides comprehensive textbook for courses on physics of power semiconductor devices; Includes extensive analytical formulations for design and analysis of device structures; Uses numerical simulation examples in every section to elucidate the operating physics and validate the models; Analyzes device performance attributes that enable development of real, energy-efficient products; Includes numerous exercises in each chapter to reinforce concepts introduced; Includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions.
  table of contents: Introduction -- Material Properties and Transport Physics -- Breakdown Voltage -- Schottky Rectifiers -- P-i-N Rectifiers -- Power MOSFETs -- Bipolar Junction Transistors -- Thyristors -- Insulated Gate Bipolar Thyristors -- Synopsis.
  note: by B. Jayant Baliga.
  subject:
    topic: Electronic circuits
  subject:
    topic: Electronics
  subject:
    topic: Microelectronics
  subject:
    topic: Circuits and Systems
  subject:
    topic: Electronic Circuits and Devices
  subject:
    topic: Electronics and Microelectronics, Instrumentation
  classification: TK7888.4
  classification: 621.3815
  related item:
    title info:
      title: Springer eBooks
  identifier: 9783319939889
  identifier: https://doi.org/10.1007/978-3-319-93988-9
  record info:
    record creation date: 180928
    record change date: 20191026021621.0
    record identifier: 978-3-319-93988-9