rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    non sort: The
    title: Physics of Semiconductor Devices
    sub title: Proceedings of IWPSD 2017
  name:
    name part: Sharma, R. K.
    role:
      role term: editor.
    role:
      role term: edt
    role:
      role term: http://id.loc.gov/vocabulary/relators/edt
  name:
    name part: Rawal, D.S.
    role:
      role term: editor.
    role:
      role term: edt
    role:
      role term: http://id.loc.gov/vocabulary/relators/edt
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: gw
    date issued: 2019
    edition: 1st ed. 2019.
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: LVII, 1299 p. 824 illus., 656 illus. in color. online resource.
  abstract: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
  table of contents: Enhanced Photodetection in Visible Region in rGo/GaN Based Hybrid Photodetector -- ZigZag Phosphorene Nanoribbons Antidot â€" Electronic structure and Device Application -- Calculation of Quantum Capacitance and Sheet Carrier Density of Graphene FETs -- Effect of Back Gate Voltage on Double Gate Single Layer Graphene Field-Effect Transistor with Improved ION -- Effects of chemical functionalization on single-walled carbon nanotubes by mild hydrogen peroxide for PV applications -- Effect of tip induced strain on nanoscale electrical properties of MoS2-Graphene heterojunctions -- Optimization of the concentration of molybdenum disulfide (MoS2) for formation of atomically thin layers -- Fabrication of 2D NEMS on flexible substrates for strain engineering in sensing applications -- Transition metal doped ZnS monolayer: The first principles insights -- Tuning Resonant Wavelength of Silicon Micro-ring Resonator with Graphene -- Diameter Dependent Band Gap Properties of Different Structures of Single-walled Carbon.-Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors.
  note: edited by R. K. Sharma, D.S. Rawal.
  subject:
    topic: Semiconductors
  subject:
    topic: Optical materials
  subject:
    topic: Electronic materials
  subject:
    topic: Nanoscale science
  subject:
    topic: Nanoscience
  subject:
    topic: Nanostructures
  subject:
    topic: Solid state physics
  subject:
    topic: Semiconductors
  subject:
    topic: Optical and Electronic Materials
  subject:
    topic: Nanoscale Science and Technology
  subject:
    topic: Solid State Physics
  classification: QC610.9-611.8
  classification: 537.622
  related item:
    title info:
      title: Springer eBooks
  related item:
    title info:
      title: Springer Proceedings in Physics, 215
  identifier: 9783319976044
  identifier: https://doi.org/10.1007/978-3-319-97604-4
  record info:
    record creation date: 190131
    record change date: 20191022082508.0
    record identifier: 978-3-319-97604-4