rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Rare Earth Oxide Thin Films
  name:
    name part: Fanciulli, Marco.
    role:
      role term: editor.
  name:
    name part: Scarel, Giovanna.
    role:
      role term: editor.
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: gw
    date issued: 2007
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: XVI, 427 p. online resource.
  abstract: Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.
  table of contents: Introduction -- ALD, MOCVD, and MBE deposition of rare earth oxides. - Requirements of precursor for MOCVD and ALD of rare earth oxides -- Models for ALD and MOCVD growth of rare earth oxides -- Growth of oxides with complex stoichiometry by ALD, e.g. La1-xCaxMnO3 -- Fabrication and characterization of rare earth scandate thin films prepared by pulsed laser deposition -- Film and interface layer composition of rare earth (Lu, Yb) oxides deposited by ALD -- Local atomic environment of high-k oxides on silicon probed by X-ray absorption spectroscopy, and advanced transmission electron microscopy techniques (TEM-EELS) -- Strain-relief at internal dielectric interfaces in high-k gate stacks with transition metal and rare earth atom oxide dielectrics -- Electrical characterization of rare earth oxides grown by ALD -- Dielectric properties of rare-earth oxides: general trends from theory -- Charge traps in high-k dielectrics: ab initio study of defects in Pr-based materials -- Experimental determination of the band offset of rare earth oxides on various semiconductors -- Band edge electronic structure, and band offsets of transition metal/rare earth oxide dielectrics -- Rare earth oxides in microelectronics -- Requirements of oxides as gate dielectrics for CMOS devices, and ultimate scaling -- The magneto-electric properties of RMnO compounds -- Sesquioxides as host materials for rare-earth-doped bulk lasers and active waveguides.
  note: edited by Marco Fanciulli, Giovanna Scarel.
  subject:
    topic: Physics
  subject:
    topic: Condensed matter
  subject:
    topic: Engineering
  subject:
    topic: Optical materials
  subject:
    topic: Electronic materials
  subject:
    topic: Materials
    topic: Surfaces
  subject:
    topic: Thin films
  subject:
    topic: Physics
  subject:
    topic: Physics, general
  subject:
    topic: Optical and Electronic Materials
  subject:
    topic: Surfaces and Interfaces, Thin Films
  subject:
    topic: Condensed Matter Physics
  subject:
    topic: Engineering, general
  classification: QC1-75
  classification: 530
  related item:
    title info:
      title: Springer eBooks
  related item:
    title info:
      title: Topics in Applied Physics, 106
  identifier: 9783540357971
  identifier: http://dx.doi.org/10.1007/b137342
  record info:
    record creation date: 100730
    record change date: 20151204185112.0
    record identifier: 978-3-540-35797-1