http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy
The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion. It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.
Basics of MBE growth -- Doping and impurity segregation effects in MBE -- Influence of strain in the epitaxial film on surface-phase equilibria -- II-VI materials -- Conclusion.