rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Extended Defects in Germanium
    sub title: Fundamental and Technological Aspects
  name:
    name part: Claeys, Cor.
    role:
      role term: editor.
  name:
    name part: Simoen, Eddy.
    role:
      role term: editor.
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: gw
    date issued: 2009
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: XX, 300 p. online resource.
  abstract: The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control.
  table of contents: Dislocations in Germanium: Mechanical Properties -- Electrical and Optical Properties -- Grain Boundaries in Germanium -- Germanium-Based Substrate Defects -- Process-Induced Defects in Germanium.
  note: edited by Cor Claeys, Eddy Simoen.
  subject:
    topic: Materials science
  subject:
    topic: Condensed matter
  subject:
    topic: Engineering
  subject:
    topic: Optical materials
  subject:
    topic: Electronic materials
  subject:
    topic: Materials Science
  subject:
    topic: Optical and Electronic Materials
  subject:
    topic: Condensed Matter Physics
  subject:
    topic: Engineering, general
  classification: TA1750-1750.22
  classification: 620.11295
  classification: 620.11297
  related item:
    title info:
      title: Springer eBooks
  related item:
    title info:
      title: Springer Series in Materials Science, 118
  identifier: 9783540856146
  identifier: http://dx.doi.org/10.1007/978-3-540-85614-6
  record info:
    record creation date: 100301
    record change date: 20151204142453.0
    record identifier: 978-3-540-85614-6