rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Effective Electron Mass in Low-Dimensional Semiconductors
  name:
    name part: Bhattacharya, Sitangshu.
    role:
      role term: creator
    role:
      role term: author.
  name:
    name part: Ghatak, Kamakhya Prasad.
    role:
      role term: author.
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: gw
    date issued: 2013
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: XXIV, 536 p. online resource.
  abstract: This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.
  table of contents: Part I: Influence of Light Waves on the Effective Electron Mass (EEM) in Optoelectronic Semiconductors -- Part II: Influence of Quantum Confinement on the EEM in Non-Parabolic Semiconductors -- Part III: The EEM in Quantum Confined Superlattices of Non- Parabolic Semiconductors -- Part IV: Influence of Intense Electric Field on the EEM in Optoelectronic Semiconductors.
  note: by Sitangshu Bhattacharya, Kamakhya Prasad Ghatak.
  subject:
    topic: Physics
  subject:
    topic: Quantum optics
  subject:
    topic: Solid state physics
  subject:
    topic: Nanoscale science
  subject:
    topic: Nanoscience
  subject:
    topic: Nanostructures
  subject:
    topic: Microwaves
  subject:
    topic: Optical engineering
  subject:
    topic: Structural materials
  subject:
    topic: Optical materials
  subject:
    topic: Electronic materials
  subject:
    topic: Physics
  subject:
    topic: Solid State Physics
  subject:
    topic: Optical and Electronic Materials
  subject:
    topic: Nanoscale Science and Technology
  subject:
    topic: Structural Materials
  subject:
    topic: Microwaves, RF and Optical Engineering
  subject:
    topic: Quantum Optics
  classification: QC176-176.9
  classification: 530.41
  related item:
    title info:
      title: Springer eBooks
  related item:
    title info:
      title: Springer Series in Materials Science, 167
  identifier: 9783642312489
  identifier: http://dx.doi.org/10.1007/978-3-642-31248-9
  record info:
    record creation date: 121009
    record change date: 20151029231307.0
    record identifier: 978-3-642-31248-9