rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Strain-Induced Effects in Advanced MOSFETs
  name:
    name part: Sverdlov, Viktor.
    role:
      role term: creator
    role:
      role term: author.
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: au
    date issued: 2011
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: XIV, 252 p. 101 illus. online resource.
  abstract: Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
  note: by Viktor Sverdlov.
  subject:
    topic: Engineering
  subject:
    topic: Electronics
  subject:
    topic: Microelectronics
  subject:
    topic: Engineering
  subject:
    topic: Electronics and Microelectronics, Instrumentation
  classification: TK7800-8360
  classification: TK7874-7874.9
  classification: 621.381
  related item:
    title info:
      title: Springer eBooks
  related item:
    title info:
      title: Computational Microelectronics
  identifier: 9783709103821
  identifier: http://dx.doi.org/10.1007/978-3-7091-0382-1
  record info:
    record creation date: 110106
    record change date: 20151125193808.0
    record identifier: 978-3-7091-0382-1