rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors
  name:
    name part: Fu, Mengqi.
    role:
      role term: creator
    role:
      role term: author.
    role:
      role term: aut
    role:
      role term: http://id.loc.gov/vocabulary/relators/aut
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  origin info:
    place:
      place term: si
    date issued: 2018
    edition: 1st ed. 2018.
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: electronic resource
    reformatting quality: access
    form: remote
    extent: XV, 102 p. 68 illus., 57 illus. in color. online resource.
  abstract: This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
  table of contents: Introduction -- Preparation, characterization and parameter extraction of InAs nanowire-based devices -- Size effect on the electrical properties of InAs nanowires -- Crystal phase- and orientation-dependent electrical properties of InAs nanowires -- Influence of growth methods on the electrical properties of InAs nanowires -- Summary.
  note: by Mengqi Fu.
  subject:
    topic: Nanoscale science
  subject:
    topic: Nanoscience
  subject:
    topic: Nanostructures
  subject:
    topic: Nanotechnology
  subject:
    topic: Semiconductors
  subject:
    topic: Materials science
  subject:
    topic: Electronic circuits
  subject:
    topic: Optical materials
  subject:
    topic: Electronic materials
  subject:
    topic: Nanoscale Science and Technology
  subject:
    topic: Nanotechnology and Microengineering
  subject:
    topic: Semiconductors
  subject:
    topic: Characterization and Evaluation of Materials
  subject:
    topic: Electronic Circuits and Devices
  subject:
    topic: Optical and Electronic Materials
  classification: QC176.8.N35
  classification: T174.7
  classification: 620.5
  related item:
    title info:
      title: Springer eBooks
  related item:
    title info:
      title: Springer Theses, Recognizing Outstanding Ph.D. Research
  identifier: 9789811334443
  identifier: https://doi.org/10.1007/978-981-13-3444-3
  record info:
    record creation date: 181129
    record change date: 20191022081142.0
    record identifier: 978-981-13-3444-3