http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Transmission electron microscopy in micro-nanoelectronics
Today, the availability of bright and highly coherent electron sources and sensitive detectors has radically changed the type and quality of the information which can be obtained by transmission electron microscopy (TEM). TEMs are now present in large numbers not only in academia, but also in industrial research centers and fabs. This book presents in a simple and practical way the new quantitative techniques based on TEM which have recently been invented or developed to address most of the main challenging issues scientists and process engineers have to face.
Active Dopant Profiling in the TEM by Off-Axis Electron Holography / David Cooper -- Dopant Distribution Quantitative Analysis Using STEM-EELS/EDX Spectroscopy Techniques / Roland Pantel, Germain Servanton -- Quantitative Strain Measurement in Advanced Devices: A Comparison Between Convergent Beam Electron Diffraction and Nanobeam Diffraction / Laurent Clement, Dominique Delille -- Dark-Field Electron Holography for Strain Mapping / Martin Hytch [and others] -- Magnetic mapping using electron holography / Etienne Snoeck, Christophe Gatel -- Interdiffusion and chemical reaction at interfaces by TEM/EELS / Sylvie Schamm-Chardon -- Characterization of process-induced defects / Nikolay Cherkashin, Alain Claverie -- In situ characterization methods in transmission electron microscopy / Aurelein Massebouef -- Specimen preparation for semiconductor analysis / David Cooper, Gerard Ben Assayag.
Includes bibliographical references and index.