rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: SOI lubistors
    sub title: lateral, unidirectional, bipolar-type insulated-gate transistors
  title info:
    title: Lubistors
  title info:
    title: Silicon-on-insulator lubistors
  name:
    name part: Omura, Y. (Yasuhisa)
    role:
      role term: creator
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: si
    date issued: 2013
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource.
  abstract: BiAdvanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors/i/b/ No comprehensive description of the physics and possible applications of the Lubistor can be found in a single source even though the Lubistor is already being used in SOI LSIs. The book provides, for the first time, a comprehensive understanding of the physics of the Lubistor. The author argues that a clear understanding of the fundamental physics of the pn junction is essential to allowing scientists and engineers to propose new devices. Since 2001 IBM has been applying the Lubistor to commercial SOI LSIs (large scale integrated devices) used in PCs and game machines. It is a key device in that it provides electrostatic protection to the LSIs. The book explains the device modeling for such applications, and covers the recent analog circuit application of the voltage reference circuit./ The author also reviews the physics and the modeling of ideal and non-ideal pn junctions through reconsideration of the Shockley's theory, offering readers an opportunity to study the physics of pn junction. Pn-junction devices are already applied to the optical communication system as the light emitter and the receiver. Alternatively, optical signal modulators are proposed for coupling the Si optical waveguide with the pn-junction injector. The book also explores the photonic crystal physics and device applications of the Lubistor./ ulliAdvanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors/liliWritten by the inventor of the Lubistor, this volume describes the technology for readers to understand the physics and applications of the device/liliFirst book devoted to the Lubistor transistor, presently being utilized in electrostatic discharge (ESD) applications in SOI technology, a growing market for semiconductor devices and advanced technologies/liliApproaches the topic in a systematic manner, from physi…
  table of contents: Title Page; Copyright; Preface; Acknowledgements; Introduction to an Exotic Device World; Part One: Brief Reviewand Modern Applications of Pn-Junction Devices; Chapter 1: Concept of an Ideal pn Junction; References; Chapter 2: Understanding the Non-ideal pn Junction -- Theoretical Reconsideration; 2.1 Introduction; 2.2 Bulk pn-Junction Diode; 2.3 Bulk pn-Junction Diode -- Reverse Bias; 2.4 The Insulated-Gate pn Junction of the SOI Lubistor -- Forward Bias; 2.5 The Insulated-Gate pn Junction of the SOI Lubistor -- Reverse Bias; References; Chapter 3: Modern Applications of the pn Junction
  table of contents: Chapter 6: Modeling of Lubistor Operation Without an EFS Layer for Circuit Simulations6.1 Introduction; 6.2 Device Structure and Measurement System; 6.3 Equivalent Circuit Models of an SOI Lubistor; 6.4 Summary; References; Chapter 7: Noise Characteristics and Modeling of Lubistor; 7.1 Introduction; 7.2 Experiments; 7.3 Results and Discussion; 7.4 Summary; References; Chapter 8: Supplementary Study on Buried Oxide Characterization; 8.1 Introduction; 8.2 Physical Model for the Transition Layer; 8.3 Capacitance Simulation; 8.4 Device Fabrication; 8.5 Results and Discussion; 8.6 Summary
  table of contents: Appendix 10B: Calculation of Electron and Hole Densities in 2DSSReferences; Chapter 11: Two-Dimensional Quantization Effect on Indirect Tunneling in SOI Lubistors with a Thin Silicon Layer; 11.1 Introduction; 11.2 Experimental Results; 11.3 Theoretical Discussion; 11.4 Summary; Appendix 11A: Wave Function Coupling Effect in the Lateral Two-Dimensional-System-to-Three-Dimensional-System (2D-to-3D) Tunneling Process; References; Chapter 12: Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors; 12.1 Introduction
  note: Yasuhisa Omura.
  note: Includes bibliographical references and index.
  subject:
    topic: Insulated gate bipolar transistors
  subject:
    topic: Silicon-on-insulator technology
  subject:
    topic: TECHNOLOGY & ENGINEERING
    topic: Mechanical
  subject:
    topic: Insulated gate bipolar transistors
  subject:
    topic: Silicon-on-insulator technology
  classification: TK7871.96.B55
  classification: 621.3815/28
  related item:
    title info:
      title: SOI lubistors
    name:
      name part: Omura, Y. (Yasuhisa).
    origin info:
      publisher: Singapore : John Wiley & Sons Inc., 2013
    identifier: (DLC) 2013023085
  identifier: 9781118487938
  identifier: 1118487931
  identifier: 9781118487921
  identifier: 1118487923
  identifier: 9781118487914
  identifier: 1118487915
  identifier: 9781118487907
  identifier: 2013027306
  identifier: EB00084209 Recorded Books
  identifier: https://doi.org/10.1002/9781118487914
  record info:
    record content source: DLC
    record creation date: 130705
    record change date: 20170124072117.3
    record identifier: ocn852031638
    language of cataloging:
      language term: eng