http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
lateral, unidirectional, bipolar-type insulated-gate transistors
BiAdvanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors/i/b/ No comprehensive description of the physics and possible applications of the Lubistor can be found in a single source even though the Lubistor is already being used in SOI LSIs. The book provides, for the first time, a comprehensive understanding of the physics of the Lubistor. The author argues that a clear understanding of the fundamental physics of the pn junction is essential to allowing scientists and engineers to propose new devices. Since 2001 IBM has been applying the Lubistor to commercial SOI LSIs (large scale integrated devices) used in PCs and game machines. It is a key device in that it provides electrostatic protection to the LSIs. The book explains the device modeling for such applications, and covers the recent analog circuit application of the voltage reference circuit./ The author also reviews the physics and the modeling of ideal and non-ideal pn junctions through reconsideration of the Shockley's theory, offering readers an opportunity to study the physics of pn junction. Pn-junction devices are already applied to the optical communication system as the light emitter and the receiver. Alternatively, optical signal modulators are proposed for coupling the Si optical waveguide with the pn-junction injector. The book also explores the photonic crystal physics and device applications of the Lubistor./ ulliAdvanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors/liliWritten by the inventor of the Lubistor, this volume describes the technology for readers to understand the physics and applications of the device/liliFirst book devoted to the Lubistor transistor, presently being utilized in electrostatic discharge (ESD) applications in SOI technology, a growing market for semiconductor devices and advanced technologies/liliApproaches the topic in a systematic manner, from physical theory, through to modelling, and finally circuit applications/li/ul This is an advanced level book requiring knowledge of electrical and electronics engineering at graduate level./ bContents includes/b: Concept of Ideal pn Junction/Proposal of Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistor (Lubistor)/ Noise Characteristics and Modeling of Lubistor/Negative Conductance Properties in Extremely Thin SOI Lubistors// Two-Dimensionally Confined Injection Phenomena at Low Temperatures in Sub-10-nm-Thick SOI Lubistors/ Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors// Gate-Controlled Bipolar Action in Ultra-thin Dynamic Threshold SOI MOSFET/Sub-Circuit Models of SOI Lubistors for Electrostatic Discharge Protection Circuit Design and Their Applications/A New Basic Element for Neural Logic Functions and Functionality in Circuit Applications/Possible Implementation of SOI Lubistors into Conventional Logic Circuits/Potentiality of Electro-Optic Modulator Based on SOI Waveguide/Principles of Parameter Extraction/Feasibility of Lubistor-Based Avalanche Photo Transistor.
Title Page; Copyright; Preface; Acknowledgements; Introduction to an Exotic Device World; Part One: Brief Reviewand Modern Applications of Pn-Junction Devices; Chapter 1: Concept of an Ideal pn Junction; References; Chapter 2: Understanding the Non-ideal pn Junction -- Theoretical Reconsideration; 2.1 Introduction; 2.2 Bulk pn-Junction Diode; 2.3 Bulk pn-Junction Diode -- Reverse Bias; 2.4 The Insulated-Gate pn Junction of the SOI Lubistor -- Forward Bias; 2.5 The Insulated-Gate pn Junction of the SOI Lubistor -- Reverse Bias; References; Chapter 3: Modern Applications of the pn Junction
Chapter 6: Modeling of Lubistor Operation Without an EFS Layer for Circuit Simulations6.1 Introduction; 6.2 Device Structure and Measurement System; 6.3 Equivalent Circuit Models of an SOI Lubistor; 6.4 Summary; References; Chapter 7: Noise Characteristics and Modeling of Lubistor; 7.1 Introduction; 7.2 Experiments; 7.3 Results and Discussion; 7.4 Summary; References; Chapter 8: Supplementary Study on Buried Oxide Characterization; 8.1 Introduction; 8.2 Physical Model for the Transition Layer; 8.3 Capacitance Simulation; 8.4 Device Fabrication; 8.5 Results and Discussion; 8.6 Summary
Appendix 10B: Calculation of Electron and Hole Densities in 2DSSReferences; Chapter 11: Two-Dimensional Quantization Effect on Indirect Tunneling in SOI Lubistors with a Thin Silicon Layer; 11.1 Introduction; 11.2 Experimental Results; 11.3 Theoretical Discussion; 11.4 Summary; Appendix 11A: Wave Function Coupling Effect in the Lateral Two-Dimensional-System-to-Three-Dimensional-System (2D-to-3D) Tunneling Process; References; Chapter 12: Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors; 12.1 Introduction
Includes bibliographical references and index.
Singapore : John Wiley & Sons Inc., 2013