rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: GaN transistors for efficient power conversion
  name:
    name part: Lidow, Alex.
    role:
      role term: creator
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: enk
    date issued: 2014
    edition: Second edition.
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource.
  abstract: Gallium nitride (GaN) is an emerging technology that promises to displace siliconMOSFETs in the next generation of power transistors. As silicon approaches itsperformance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students andpracticing power conversion engineers ahead of the learning curve in GaN technologyadvancements. Acknowledging that GaN transistors are not one-to-one replacements forthe current MOSFET technology, this book serves as a practical guide for understandingbasic GaN transistor construction, characteristics, and applications. Included arediscussions on the fundamental physics of these power semiconductors, layout and othercircuit design considerations, as well as specific application examples demonstratingdesign techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increaseefficiency in existing applications such as DC'DC conversion, while opening possibilitiesfor new applications including wireless power transfer and envelope tracking. This bookis an essential learning tool and reference guide to enable power conversion engineers todesign energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device'circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors ' see companion website for further details. A valuable learning resourc…
  note: Alex Lidow, Johan Strydom, Michael de Rooij, David Reusch.
  note: Includes bibliographical references and index.
  subject:
    topic: Field-effect transistors
  subject:
    topic: Gallium nitride
  subject:
    topic: TECHNOLOGY & ENGINEERING
    topic: Mechanical
  subject:
    topic: Field-effect transistors
  subject:
    topic: Gallium nitride
  classification: TK7871.95
  classification: 621.3815/284
  related item:
    title info:
      title: GaN transistors for efficient power conversion
    name:
      name part: Lidow, Alex.
    origin info:
      publisher: Chichester, West Sussex : John Wiley & Sons Ltd, [2014]
      edition: Second edition.
    identifier: (DLC) 2014014560
  identifier: 9781118844786
  identifier: 1118844785
  identifier: 9781118844793
  identifier: 1118844793
  identifier: 9781118844779
  identifier: 1118844777
  identifier: 9781118844762
  identifier: 2014023079
  identifier: EB00587443 Recorded Books
  identifier: https://doi.org/10.1002/9781118844779
  record info:
    record content source: DLC
    record creation date: 140612
    record change date: 20170124071244.7
    record identifier: ocn881406975
    language of cataloging:
      language term: eng