rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Spintronics for next generation innovative devices
  name:
    name part: Sato, Katsuaki
    role:
      role term: editor.
  name:
    name part: Saitoh, Eiji
    role:
      role term: editor.
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: enk
    date issued: 2015
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource.
  abstract: Spintronics (short for spin electronics, or spin transport electronics) exploits both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. Controlling the spin of electrons within a device can produce surprising and substantial changes in its properties. Drawing from many cutting edge fields, including physics, materials science, and electronics device technology, spintronics has provided the key concepts for many next generation information processing and transmitting technologies. This book discusse.
  table of contents: Cover; Title Page; Copyright; Contents; List of Contributors; Series Preface; Preface; Introduction; Materials for Spintronics; Spin Injector Materials with High Polarization; Carbon Spintronics; Silicon Spintronics; Spintronics Functions; Spin-Dependent Transport; Spin Current, Spin Hall Effect, and Spin Pumping; Spin Torque; Spin Seebeck Effect; Electric Control of Spin Phenomena; Spin Photonics; Chapter 1 Fundamentals of Magnetoresistance Effects; 1.1 Giant Magnetoresistance (GMR) Effect; 1.1.1 Magnetoresistance Effects in Ferromagnetic Materials; 1.1.2 Phenomenon of GMR Effect.
  table of contents: 1.1.3 Mechanism of GMR Effect1.1.4 Oscillatory Behavior of Interlayer Exchange Coupling and GMR; 1.1.5 The Application of GMR and the Spin Valve; 1.1.6 CIP-GMR and CPP-GMR; 1.1.7 GMR in Granular Systems; 1.2 Tunnel Magnetoresistance (TMR) Effect; 1.2.1 The Principle of TMR; 1.2.2 TMR Effect in Transition Metals and Alloys with Al-O Tunnel Barrier; 1.2.3 TMR Effect in Half-Metallic Systems; 1.2.4 TMR Effect with Coherent Tunneling; 1.2.5 TMR Effect in Granular Systems; References; Chapter 2 Spintronics Materials with High-Spin Polarization; 2.1 Introduction.
  table of contents: 2.2 Development of Highly Spin Polarized Materials2.3 Device Applications; 2.3.1 CPP-GMR Devices using Highly Spin Polarized Heusler Alloys; 2.3.2 Narrow Read Sensor for High Density Recording; 2.4 Summary; Acknowledgements; References; Chapter 3 Spin Current; 3.1 Introduction; 3.2 Concept of Spin Current; 3.3 An Exact Definition of Spin Current; 3.3.1 Microscopic Description of Conduction Electrons; 3.3.2 Conservation of Charge; 3.3.3 Conservation of Spin and Spin Current; 3.4 Incoherent Spin Current; 3.4.1 Fermi-Dirac Distribution [3, 4, 5]; 3.4.2 Diffusion Equation.
  table of contents: 3.4.3 Spin Diffusion Equation [6]3.5 Exchange Spin Current; 3.5.1 Magnetic Order and Exchange Interaction; 3.5.2 Exchange Spin Current; 3.5.3 Spin-Wave Spin Current; 3.6 Topological Spin Current; 3.6.1 Bulk Topological Spin Current; 3.6.2 Surface Topological Spin Current; 3.7 Thermal Spin Current -- Spin Seebeck Effect; 3.7.1 Sample Configuration and Measurement Mechanism; 3.7.2 Longitudinal Spin Seebeck Effect; 3.7.3 Transverse Spin Seebeck Effect; 3.7.4 Thermoelectric Coating based on Spin Seebeck Effect; 3.7.5 Basic Mechanism of Spin Seebeck Effect; 3.8 Concluding Remarks; References.
  table of contents: Chapter 4 Spin Hall Effect and Inverse Spin Hall Effect4.1 Spin Hall Effect; 4.1.1 Introduction; 4.1.2 Intrinsic and Extrinsic Hall Effect; 4.1.3 Experimental Observation of Spin Hall Effect in Semiconductors and Metals; 4.1.4 Intrinsic Hall Effects for Photons and Magnons; 4.2 Topological Insulators; 4.2.1 Two-Dimensional Topological Insulators; 4.2.2 Three-Dimensional Topological Insulators; 4.2.3 Experiments on Topological Insulators; 4.3 Summary; Acknowledgment; References; Chapter 5 Spin Torque (Domain Wall Drive, Magnetization Reversal); 5.1 Introduction.
  note: edited by Katsuaki Sato and Eiji Saitoh.
  note: Includes bibliographical references and index.
  subject:
    topic: Spintronics
  subject:
    topic: TECHNOLOGY & ENGINEERING
    topic: Electrical
  subject:
    topic: Spintronics
  subject:
    topic: Nanoelectromechanical systems
  subject:
    topic: Semiconductors
  subject:
    topic: Spintronics
  classification: TK7874.887
  classification: 621.3
  related item:
    title info:
      title: Spintronics for next generation innovative devices
    origin info:
      publisher: Chichester, West Sussex, United Kingdom : John Wiley & Sons Inc., [2015]
    identifier: (DLC) 2015035273
  related item:
    title info:
      title: Wiley series in materials for electronic and optoelectronic applications
  identifier: 9781118751787 (Adobe PDF)
  identifier: 1118751787 (Adobe PDF)
  identifier: 9781118751794 (ePub)
  identifier: 1118751795 (ePub)
  identifier: 9781118751916 (cloth)
  identifier: 9781118751886
  identifier: 1118751884
  identifier: 1118751914
  identifier: 2015037336
  identifier: https://doi.org/10.1002/9781118751886
  record info:
    record content source: DLC
    record creation date: 151001
    record change date: 20170527040647.1
    record identifier: ocn914706153
    language of cataloging:
      language term: eng