Dilute nitride semiconductors

* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field.* It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas* Includes a...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριος συγγραφέας:	Henini, Mohamed
Συγγραφή απο Οργανισμό/Αρχή:	ScienceDirect (Online service)
Μορφή:	Ηλεκτρονική πηγή Βιβλίο
Γλώσσα:	English
Έκδοση:	Amsterdam London Elsevier 2005
Θέματα:	Ημιαγωγοί Νιτρίδια
Διαθέσιμο Online:	An electronic book accessible through the World Wide Web; click for information

Πίνακας περιεχομένων:

Contents
Preface v
CHAPTER 1
MBE GROWTH AND CHARACTERIZATION OF LONG WAVELENGTH DILUTE NITRIDE IIIV ALLOYS
1.1. Introduction
1.2. MBE Growth of Dilute IIIV Nitrides
1.3. Dilute Nitride Characterization
1.4. Energy Band and Carrier Transport Properties
1.5. Annealing and NIn Nearest Neighbor Effects
1.6. Summary
Acknowledgements
References
CHAPTER 2
EPITAXIAL GROWTH OF DILUTE NITRIDES BY METAL-ORGANIC VAPOUR PHASE EPITAXY
2.1. Introduction
2.2. Epitaxial Growth of GaInAsN-based Structures
2.3. Long Wavelength GaAs-based Laser Performances
2.4. Conclusion
Acknowledgements
References
CHAPTER 3
THE CHEMICAL BEAM EPITAXY OF DILUTE NITRIDE ALLOY
SEMICONDUCTORS
3.1. Introduction to Dilute Nitride Semiconductors
3.2. The Chemical Beam Epitaxial/Metalorganic Molecular Beam Epitaxial
(CBE/MOMBE) Growth Process
3.3. CBE of Dilute Nitride Semiconductors
3.4. Fundamental Studies of GaNx As (12 x ) Band Structure
3.5. The Compositions and Properties of Dilute Nitrides Grown by CBE
3.6. CBE-grown Dilute Nitride Devices
3.7. The Potential for Production CBE of Dilute Nitrides
3.8. Conclusions
Acknowledgements
References
CHAPTER 4
MOMBE GROWTH AND CHARACTERIZATION OF IIIV-N
COMPOUNDS AND APPLICATION TO InAs QUANTUM DOTS
4.1. Introduction
4.2. MOMBE Growth and Characterization of GaAsN
4.3. Relation of In and N Incorporations in the Growth of GaInNAs
4.4. Growth and Characterization of GaAsNSe New Alloy
4.5. Application of GaAsN to InAs Quantum Dots
4.6. Summary
Acknowledgements
References
CHAPTER 5
RECENT PROGRESS IN DILUTE NITRIDE QUANTUM DOTS
5.1. Self-organized Quantum Dots
5.2. Dilute Nitride Quantum Dots
5.3. Recent Experimental Progress in GaInNAS QDS
5.4. Other Kinds of Dilute Nitride QDs
5.5. Summary and Future Challenges in Dilute Nitride QDs
Acknowledgements
References
CHAPTER 6
PHYSICS OF ISOELECTRONIC DOPANTS IN GaAs
6.1. Nitrogen Isoelectronic Impurities
6.2. The Failure of the Virtual Crystal Approximation
6.3. Prevalent Theoretical Models on Dilute Nitrides
6.4. Electroreflectance Study of GaAsN
6.5. Resonant Raman Scattering Study of Conduction Band States
6.6. Compatibility with other Experimental Results
6.7. A Complementary Alloy: GaAsBi
6.8. Summary
6.9. Conclusion
References
CHAPTER 7
MEASUREMENT OF CARRIER LOCALIZATION DEGREE, ELECTRON EFFECTIVE MASS, AND EXCITON SIZE IN In x Ga1 2 x As 1 2 y N y Alloys
7.1. Introduction
7.2. Experimental
7.3. Single Carrier Localization in In x Ga1 2 x As 1 2 y N y
7.4. Measurement of the Electron Effective Mass and Exciton Wave function Size
7.5. Conclusions
Acknowledgements
References
CHAPTER 8
PROBING THE UNUSUAL BAND STRUCTURE OF DILUTE Ga(AsN)QUANTUM WELLS BY MAGNETO-TUNNELLING SPECTROSCOPY AND OTHER TECHNIQUES
8.1. Introduction
8.2. Resonant Tunnelling Diodes Based on Dilute Nitrides
8.3. Magneto-Tunnelling Spectroscopy to Probe the Conduction Band Structure of Dilute Nitrides
8.4. Electronic Properties: From the Very Dilute Regime ( , 0.1%) to the Dilute Regime
8.5. Conduction in Dilute Nitrides and Future Prospects
8.6. Summary and Conclusions
Acknowledgements
References
CHAPTER 9
PHOTO- AND ELECTRO-REFLECTANCE OF IIIV-N COMPOUNDS AND LOW DIMENSIONAL STRUCTURES
9.1. Principles of Electromodulation in Electro- and Photo-reflectance Spectroscopy
9.2. Band Structure of (Ga,In)(As,Sb,N) Bulk-like Layers
9.3. (Ga,In)(As,Sb,N)-Based Quantum Well Structures
9.4. The Influence of Post-grown Annealing on GaInNAs Structures
9.5. Photoreflectance Investigation of the Exciton Binding Energy
9.6. Manifestation of the Carrier Localization Effect in Photoreflectance Spectroscopy
References
CHAPTER 10
BAND ANTICROSSING AND RELATED ELECTRONIC STRUCTURE IN III-N-V ALLOYS
10.1. Introduction
10.2. Band Anticrossing Model
10.3. Experimental Evidence of Band Splitting and Anticrossing Characteristics
10.4. Novel Electronic and Transport Properties of III-N-V Alloys
10.5. Conclusions
Acknowledgements
References
CHAPTER 11
A TIGHT-BINDING BASED ANALYSIS OF THE BAND ANTI-CROSSING MODEL AND ITS APPLICATION IN Ga(In)NAs ALLOYS
11.1. Introduction
11.2. Nitrogen Resonant States in Ordered GaNx As 1 2 x Structures
11.3. Analytical Model for Quantum Well Confined State Energies and Dispersion
11.4. Influence of Disorder on Nitrogen Resonant States, E 2 and Eώ in GaNx As 1 2 x
11.5. Conduction Band Structure and Effective Mass in Disordered GaNx As 1 2 x
11.6. Alloy Scattering and Mobility in Dilute Nitride Alloys
11.7. Conclusions
Acknowledgements
References
CHAPTER 12
ELECTRONIC STRUCTURE EVOLUTION OF DILUTE
IIIV NITRIDE ALLOYS
12.1. Introduction
12.2. Phenomenology of Dilute IIIV Nitrides
12.3. Empirical Pseudopotential Methodology
12.4. Electronic Structure Evolution of Dilute Nitrides
12.5. Summary of Electronic Structure Evolution
12.6. Phenomenology of Dilute Nitride Quaternaries
12.7. Future Challenges of New Nitride Materials
12.8. Conclusions
Acknowledgements
References
CHAPTER 13
THEORY OF NITROGENHYDROGEN COMPLEXES IN N-CONTAINING IIIV ALLOYS
13.1. Introduction
13.2. Theoretical Methods
13.3. NH Complexes in GaAsN Alloys
13.4. Intrinsic N and H Impurities in GaP AND GaAs
13.5. NH Complexes in InGaAsN
13.6. NH Complexes in GaPN
13.7. Conclusions
References
CHAPTER 14
DISLOCATION-FREE IIIV-N ALLOY LAYERS ON Si SUBSTRATES AND THEIR DEVICE APPLICATIONS
14.1. Introduction
14.2. Dislocation Generation Mechanisms in Lattice-mismatched Heteroepitaxy
14.3. Lattice-matched Heteroepitaxy of IIIV-N Alloys on IIIV Compound Semiconductors
14.4. Growth of Dislocation-free IIIV-N Alloy Layers on Si Substrates
14.5. Device Applications
14.6. Summary
Acknowledgements
References
CHAPTER 15
GaNAsSb ALLOY AND ITS POTENTIAL FOR DEVICE APPLICATIONS
15.1. Introduction
15.2. MBE of the GaNAsSb Alloy
15.3. Bands
15.4. Annealing Effect
15.5. Quinary Alloy
15.6. Long-wavelength GaAs-based Laser
15.7. HBT
15.8. Conclusions
Acknowledgements
References
CHAPTER 16
A COMPARATIVE LOOK AT 1.3 m m InGaAsN-BASED VCSELs FOR FIBER-OPTICAL COMMUNICATION SYSTEMS
16.1. Introduction: 0.85 m m versus 1.3 m m VCSELs
16.2. Approaches to Achieve 1.3 m m VCSELs
16.3. 1.3 m m VCSELs Based on InGaAsN
16.4. Outlook
16.5. Conclusion
Acknowledgements
References
CHAPTER 17
LONG-WAVELENGTH DILUTE NITRIDEANTIMONIDE LASERS
17.1. Introduction
17.2. Epitaxial Growth Systems: MOVPE and MBE
17.3. Ion Damage and Annealing Behavior
17.4. GaInNAsSb Edge-emitting Lasers
17.5. Spontaneous Emission Studies
17.6. GaInNAsSb VCSELs
17.7. High Power Lasers Based on GaInNAs(Sb)
17.8. Relative Intensity Noise
17.9. GaInNAsSb Electroabsorption Modulators and Saturable Absorbers
17.10. Laser Reliability
17.11. Summary
Acknowledgements
References
CHAPTER 18
APPLICATION OF DILUTE NITRIDE MATERIALS TO HETEROJUNCTION BIPOLAR TRANSISTORS
18.1. Introduction
18.2. Design Considerations for GaInNAs-based HBTs
18.3. Material Growth and Device Processing
18.4. GaInNAs HBT Results
18.5. Circuit Applications for GaInNAs HBTs
18.6. Future Outlook
Acknowledgements
References
Index

Dilute nitride semiconductors

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