Mosfet Modeling & BSIM3 User’s Guide

• Κύριοι συγγραφείς: Cheng, Yuhua (Συγγραφέας), Hu, Chenming (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Boston, MA : Springer US, 2002.
• Θέματα: Engineering.; Electrical engineering.; Electronic circuits.; Circuits and Systems.; Electrical Engineering.

Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a...

Πίνακας περιεχομένων:

• Significant Physical Effects In Modern MOSFETs
• Threshold Voltage Model
• I–V Model
• Capacitance Model
• Substrate Current Model
• Noise Model
• Source/Drain Parasitics Model
• Temperature Dependence Model
• Non-quasi Static (NQS) Model
• BSIM3v3 Model Implementation
• Model Testing
• Model Parameter Extraction
• RF and Other Compact Model Applications.