Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment Kiev, Ukraine 26–30 April 2004 /
This proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on “Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment” held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to...
| Συγγραφή απο Οργανισμό/Αρχή: | |
|---|---|
| Άλλοι συγγραφείς: | , , |
| Μορφή: | Ηλεκτρονική πηγή Ηλ. βιβλίο |
| Γλώσσα: | English |
| Έκδοση: |
Dordrecht :
Springer Netherlands,
2005.
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| Σειρά: | NATO Science Series II: Mathematics, Physics and Chemistry,
185 |
| Θέματα: | |
| Διαθέσιμο Online: | Full Text via HEAL-Link |
Πίνακας περιεχομένων:
- Technology and Economics
- High Temperature Electronics - Cluster Effects
- On the Evolution of SOI Materials and Devices
- SOI Technology as a Basis for Microphotonic-Microelectronic Integrated Devices
- SOI Material Technologies
- Smart Cut Technology: The Path for Advanced SOI Substrates
- Porous Silicon Based SOI: History and Prospects
- Achievement of SiGe-on-Insulator Technology
- CVD Diamond Films for SOI Technologies
- Radical Beam Quasiepitaxy Technology for Fabrication of Wide-Gap Semiconductors on Insulator
- Impact of Hydrostatic Pressure during Annealing of Si:O on Creation of Simox - Like Structures
- SiO2 and Si3N4 Phase Formation by Ion Implantation with In-Situ Ultrasound Treatment
- Fabrication and Characterisation of Silicon on Insulator Substrates Incorporating Thermal Vias
- Reliability and Operation of SOI Devices in Harsh Environment
- Reliability and Electrical Fluctuations in Advanced SOI CMOS Devices
- Hydrogen and High-Temperature Charge Instability of SOI Structures and MOSFETs
- Recent Advances in SOI MOSFET Devices and Circuits for Ultra-Low Power / High Temperature Applications
- Silicon-on-Insulator Circuits for Application at High Temperatures
- High-Voltage SOI Devices for Automotive Applications
- Heat Generation Analysis in SOI LDMOS Power Transistors
- Novel SOI MOSFET Structure for Operation over a Wide Range of Temperatures
- MOSFETs Scaling Down: Advantages and Disadvantages for High Temperature Applications
- Temperature Dependence of RF Losses in High-Resistivity SOI Substrates
- Radiation Effects
- Review of Radiation Effects in Single and Multiple-Gate SOI MOSFETs
- Radiation Effects in SOI: Irradiation by High Energy Ions and Electrons
- Radiation Characteristics of Short P- Channel MOSFETs on SOI Substrates
- Total Dose Behavior of Partially Depleted Delecut SOI MOSFETs
- Radiation Effect on Electrical Properties of Fully-Depleted Unibond SOI MOSFETs
- Characterization and Simulation of SOI Devices Operating under Harsh Environment
- Low Cost High Temperature Test System for SOI Devices
- Characterization of Carrier Generation in Thin-Film SOI Devices by Reverse Gated-Diode Technique and its Application at High Temperatures
- Back-Gate Induced Noise Overshoot in Partially-Depleted SOI MOSFETs
- Novel SOI Devices and Sensors Operating at Harsh Conditions
- SiGe Heterojunction Bipolar Transistors on Insulating Substrates
- Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI)
- High-Voltage High-Current DMOS Transistor Compatible with High-Temperature Thin-Film SOI CMOS Applications
- A Novel Low Leakage EEPROM Cell for Application in an Extended Temperature Range (?40°C Up to 225°C)
- Design, Fabrication and Characterization of SOI Pixel Detectors of Ionizing Radiation
- Polysilicon-on-Insulator Layers at Cryogenic Temperatures and High Magnetic Fields
- Planar Photomagnetic Effect SOI Sensors for Various Applications with Low Detection Limit
- Theoretical Limit for the SiO2 Thickness in Silicon MOS Devices
- Compact Model of the Nanoscale Gate-All-Around MOSFET
- Self-Assembled Semiconductor Nanowires on Silicon and Insulating Substrates: Experimental Behavior
- Fabrication of SOI Nano Devices.
