Nanoscaled Semiconductor-on-Insulator Structures and Devices

• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Άλλοι συγγραφείς: Hall, Steve (Επιμελητής έκδοσης), Nazarov, Alexei N. (Επιμελητής έκδοσης), Lysenko, Vladimir S. (Επιμελητής έκδοσης)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Dordrecht : Springer Netherlands, 2007.
• Σειρά: NATO Science for Peace and Security Series B: Physics and Biophysics,
• Θέματα: Materials science.; Electrical engineering.; Electronics.; Microelectronics.; Optical materials.; Electronic materials.; Nanotechnology.; Materials Science.; Optical and Electronic Materials.; Electrical Engineering.; Electronics and Microelectronics, Instrumentation.

This proceedings volume constitutes an archive of the contributions of the key-speakers who attended the NATO Advanced Research Workshop on “Nanoscaled Semiconductor-On-Insulator Structures and devices” held in the Tourist and Recreation Centre “Sudak” (Crimea, Ukraine) from 15 to 19 October 2006. T...

Πίνακας περιεχομένων:

• Nanoscaled SOI Material and Device Technologies
• Status and trends in SOI nanodevices
• Non-Planar Devices for Nanoscale CMOS
• High-? Dielectric Stacks for Nanoscaled SOI Devices
• Nanoscaled Semiconductor Heterostructures for CMOS Transistors Formed by Ion Implantation and Hydrogen Transfer
• Fluorine –Vacancy Engineering: A Viable Solution for Dopant Diffusion Suppression in SOI Substrates
• Suspended Silicon-On-Insulator Nanowires for the Fabrication of Quadruple Gate MOSFETs
• Physics of Novel Nanoscaled SemOI Devices
• Integration of silicon Single-Electron Transistors Operating at Room Temperature
• SiGe Nanodots in Electro-Optical SOI Devices
• Nanowire Quantum Effects in Trigate SOI MOSFETs
• Semiconductor Nanostructures and Devices
• MuGFET CMOS Process with Midgap Gate Material
• Doping Fluctuation Effects in Multiple-Gate SOI MOSFETs
• SiGeC HBTs: impact of C on Device Performance
• Reliability and Characterization of Nanoscaled SOI Devices
• Noise Research of Nanoscaled SOI Devices
• Electrical Characterization and Special Properties of FINFET Structures
• Substrate Effect on the Output Conductance Frequency Response of SOI MOSFETs
• Investigation of Compressive Strain Effects Induced by STI and ESL
• Charge Trapping Phenomena in Single Electron NVM SOI Devices Fabricated by a Self-Aligned Quantum DOT Technology
• Theory and Modeling of Nanoscaled Devices
• Variability in Nanoscale UTB SOI Devices and its Impact on Circuits and Systems
• Electron Transport in Silicon-on-Insulator Nanodevices
• All Quantum Simulation of Ultrathin SOI MOSFETs
• Resonant Tunneling Devices on SOI Basis
• Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions
• Three-Dimensional (3-D) Analytical Modeling of the Threshold Voltage, DIBL and Subthreshold Swing of Cylindrical Gate all Around Mosfets.