Narrow Gap Semiconductors 2007 Proceedings of the 13th International Conference, 8–12 July, 2007, Guildford, UK /
Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viabl...
| Συγγραφή απο Οργανισμό/Αρχή: | |
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| Άλλοι συγγραφείς: | , |
| Μορφή: | Ηλεκτρονική πηγή Ηλ. βιβλίο |
| Γλώσσα: | English |
| Έκδοση: |
Dordrecht :
Springer Netherlands,
2008.
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| Σειρά: | Springer Proceedings in Physics,
119 |
| Θέματα: | |
| Διαθέσιμο Online: | Full Text via HEAL-Link |
Πίνακας περιεχομένων:
- Spin-Related Phenomena
- Gate Dependence of Spin-Splitting in an InSb/InAlSb Quantum Well
- Photogalvanic Effects in HgTe Quantum Wells
- Magnetic and Structural Properties of Ferromagnetic GeMnTe Layers
- Control and Probe of Carrier and Spin Relaxations in InSb Based Structures
- Density and Well-Width Dependence of the Spin Relaxation in n-InSb/AlInSb Quantum Wells
- Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb Heterostructures
- Temperature Dependence of the Electron Lande g-Factor in InSb
- Anomalous Spin Splitting of Electrons in InSb Type-II Quantum Dots in an InAs Matrix
- Measurement of the Dresselhaus and Rashba Spin-Orbit Coupling Via Weak Anti-Localization in InSb Quantum Wells
- Growth, Fabrication, Characterisation and Theory
- Picosecond Carrier Dynamics in Narrow-Gap Semiconductors studied by Terahertz Radiation Pulses
- Band Structure of InSbN and GaSbN
- Growth and Characterisation of Dilute Antimonide Nitride Materials for Long Wavelength Applications
- Electron Interband Breakdown in a Kane Semiconductor with a Degenerate Hole Distribution
- InMnAs Quantum Dots: A Raman Spectroscopy Analysis
- Conduction Band States in AlP/GaP Quantum Wells
- Growth of InAsSb Quantum Wells by Liquid Phase Epitaxy
- Diode Lasers for Free Space Optical Communications Based on InAsSb/InAsSbP Grown by LPE
- Epitaxial Growth and Characterization of PbGeEuTe Layers
- Monte Carlo Simulation of Electron Transport in PbTe
- L-Band-Related Interband Transition in InSb/GaSb Self-Assembled Quantum Dots
- Antimony Distribution in the InSb/InAs QD Heterostructures
- Transport Properties of InAs0.1Sb0.9 Thin Films Sandwiched by Al0.1In0.9Sb Layers Grown on GaAs(100) Substrates by Molecular Beam Epitaxy
- Modelling of Photon Absorption and Carrier Dynamics in HgCdTe under mid-IR Laser Irradiation
- Monte Carlo Study of Transport Properties of InN
- New Type of Combined Resonance in p-PbTe
- Carbon Nanotubes and Graphene
- Theory of Third-Order Optical Susceptibility of Single-Wall Carbon Nanotubes With Account of Coulomb Interaction
- Unveiling the Magnetically Induced Field-Effect in Carbon Nanotubes Devices
- Transient Zitterbewegung of Electrons in Graphene and Carbon Nanotubes
- Cross-Polarized Exciton Absorption in Semiconducting Carbon Nanotubes
- Nanocrystals and Nanowires
- Self-Assembled InSb/InAs Quantum Dots for the Mid-Infrared Spectral Range 3–4 ?m
- InSb/InAs Nanostructures Grown by Molecular Beam Epitaxy Using Sb2 and As2 Fluxes
- Electronic Devices
- Performance Evaluation of Conventional Sb-based Multiquantum Well Lasers operating above 3?m at Room Temperature
- Electroluminescence From Electrically Pumped GaSb-Based VCSELs
- Wavelength Tunable Resonant Cavity Enhanced Photodetectors Based on Lead-Salts Grown by MBE
- Farfield Measurements of Y-Coupled Quantum Cascade Lasers
- Impact of Doping Density in Short-Wavelength InP-Based Strain-Compensated Quantum-Cascade Lasers
- Magnetic Field Effects in InSb/AlxIn1?xSb Quantum-Well Light-Emitting Diodes
- Electroluminescence From InSb-Based Mid-Infrared Quantum Well Lasers
- InAs Quantum Hot Electron Transistor
- Easy-to-Use Scalable Antennas for Coherent Detection of THz Radiation
- Single Photon Detection in the Long Wave Infrared
- High-Performance Fabry-Perot and Distributed-Feedback Interband Cascade Lasers
- Mid-Infrared Lead-Salt VECSEL (Vertical External Cavity Surface Emitting Laser) for Spectroscopy
- Optically Pumped GaSb-Based VECSELs
- Magneto-Transport and Magneto-Optics
- Cyclotron Resonance Photoconductivity of a Two-Dimensional Electron Gas in HgTe Quantum Wells
- Extrinsic Electrons and Carrier Accumulation in AlxIn1?xSb/InSb Quantum Wells: Well-Width Dependence
- Negative and Positive Magnetoresistance in Variable-Range Hopping Regime of Undoped AlxIn1?xSb/InSb Quantum Wells
- Semimetal-Insulator Transition in Two-Dimensional System at the Type II Broken-Gap InAs/GalnAsSb Single Heterointerface
- Magnetoexcitons in Strained InSb Quantum Wells.
