Fundamentals of III-V Semiconductor MOSFETs

• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Άλλοι συγγραφείς: Oktyabrsky, Serge (Επιμελητής έκδοσης), Ye, Peide (Επιμελητής έκδοσης)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Boston, MA : Springer US : Imprint: Springer, 2010.
• Θέματα: Engineering.; Solid state physics.; Spectroscopy.; Microscopy.; Electronic circuits.; Optical materials.; Electronic materials.; Circuits and Systems.; Solid State Physics.; Spectroscopy and Microscopy.; Optical and Electronic Materials.

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a r...

Πίνακας περιεχομένων:

• Non-Silicon MOSFET Technology: A Long Time Coming
• Properties and Trade-Offs of Compound Semiconductor MOSFETs
• Device Physics and Performance Potential of III-V Field-Effect Transistors
• Theory of HfO2-Based High-k Dielectric Gate Stacks
• Density Functional Theory Simulations of High-k Oxides on III-V Semiconductors
• Interfacial Chemistry of Oxides on III-V Compound Semiconductors
• Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model
• Materials and Technologies for III-V MOSFETs
• InGaAs, Ge, and GaN Metal-Oxide-Semiconductor Devices with High-k Dielectrics for Science and Technology Beyond Si CMOS
• Sub-100 nm Gate III-V MOSFET for Digital Applications
• Electrical and Material Characteristics of Hafnium Oxide with Silicon Interface Passivation on III-V Substrate for Future Scaled CMOS Technology
• p-type Channel Field-Effect Transistors
• Insulated Gate Nitride-Based Field Effect Transistors
• Technology/Circuit Co-Design for III-V FETs.