Nanometer Variation-Tolerant SRAM Circuits and Statistical Design for Yield /

Variability is one of the most challenging obstacles for IC design in the nanometer regime.  In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost,...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς: Abu-Rahma, Mohamed H. (Συγγραφέας), Anis, Mohab (Συγγραφέας)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: New York, NY : Springer New York : Imprint: Springer, 2013.
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
LEADER 03092nam a22004455i 4500
001 978-1-4614-1749-1
003 DE-He213
005 20151125192759.0
007 cr nn 008mamaa
008 120928s2013 xxu| s |||| 0|eng d
020 |a 9781461417491  |9 978-1-4614-1749-1 
024 7 |a 10.1007/978-1-4614-1749-1  |2 doi 
040 |d GrThAP 
050 4 |a TK7888.4 
072 7 |a TJFC  |2 bicssc 
072 7 |a TEC008010  |2 bisacsh 
082 0 4 |a 621.3815  |2 23 
100 1 |a Abu-Rahma, Mohamed H.  |e author. 
245 1 0 |a Nanometer Variation-Tolerant SRAM  |h [electronic resource] :  |b Circuits and Statistical Design for Yield /  |c by Mohamed H. Abu-Rahma, Mohab Anis. 
264 1 |a New York, NY :  |b Springer New York :  |b Imprint: Springer,  |c 2013. 
300 |a XVI, 172 p.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
505 0 |a Introduction -- Variability in Nanometer Technologies and Impact on SRAM -- Variarion-Tolerant SRAM Write and Read Assist Techniques -- Reducing SRAM Power using Fine-Grained Wordline Pulse Width Control -- A Methodology for Statistical Estimation of Read Access Yield in SRAMs -- Characterization of SRAM Sense Amplifier Input Offset for Yield Prediction. 
520 |a Variability is one of the most challenging obstacles for IC design in the nanometer regime.  In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density.  With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies.   Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques; Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view; Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques. 
650 0 |a Engineering. 
650 0 |a Computer-aided engineering. 
650 0 |a Electronic circuits. 
650 1 4 |a Engineering. 
650 2 4 |a Circuits and Systems. 
650 2 4 |a Computer-Aided Engineering (CAD, CAE) and Design. 
700 1 |a Anis, Mohab.  |e author. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer eBooks 
776 0 8 |i Printed edition:  |z 9781461417484 
856 4 0 |u http://dx.doi.org/10.1007/978-1-4614-1749-1  |z Full Text via HEAL-Link 
912 |a ZDB-2-ENG 
950 |a Engineering (Springer-11647)