Nanometer Variation-Tolerant SRAM Circuits and Statistical Design for Yield /
Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost,...
| Κύριοι συγγραφείς: | Abu-Rahma, Mohamed H. (Συγγραφέας), Anis, Mohab (Συγγραφέας) |
|---|---|
| Συγγραφή απο Οργανισμό/Αρχή: | SpringerLink (Online service) |
| Μορφή: | Ηλεκτρονική πηγή Ηλ. βιβλίο |
| Γλώσσα: | English |
| Έκδοση: |
New York, NY :
Springer New York : Imprint: Springer,
2013.
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| Θέματα: | |
| Διαθέσιμο Online: | Full Text via HEAL-Link |
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