Nanometer Variation-Tolerant SRAM Circuits and Statistical Design for Yield /
Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost,...
| Main Authors: | Abu-Rahma, Mohamed H. (Author), Anis, Mohab (Author) |
|---|---|
| Corporate Author: | SpringerLink (Online service) |
| Format: | Electronic eBook |
| Language: | English |
| Published: |
New York, NY :
Springer New York : Imprint: Springer,
2013.
|
| Subjects: | |
| Online Access: | Full Text via HEAL-Link |
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