Nanometer Variation-Tolerant SRAM Circuits and Statistical Design for Yield /

• Κύριοι συγγραφείς: Abu-Rahma, Mohamed H. (Συγγραφέας), Anis, Mohab (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: New York, NY : Springer New York : Imprint: Springer, 2013.
• Θέματα: Engineering.; Computer-aided engineering.; Electronic circuits.; Circuits and Systems.; Computer-Aided Engineering (CAD, CAE) and Design.

Variability is one of the most challenging obstacles for IC design in the nanometer regime.  In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost,...

Πίνακας περιεχομένων:

• Introduction
• Variability in Nanometer Technologies and Impact on SRAM
• Variarion-Tolerant SRAM Write and Read Assist Techniques
• Reducing SRAM Power using Fine-Grained Wordline Pulse Width Control
• A Methodology for Statistical Estimation of Read Access Yield in SRAMs
• Characterization of SRAM Sense Amplifier Input Offset for Yield Prediction.