Fundamentals of Nanoscaled Field Effect Transistors

• Κύριος συγγραφέας: Chaudhry, Amit (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: New York, NY : Springer New York : Imprint: Springer, 2013.
• Θέματα: Engineering.; Nanoscale science.; Nanoscience.; Nanostructures.; Electronic circuits.; Electronics.; Microelectronics.; Optical materials.; Electronic materials.; Electronics and Microelectronics, Instrumentation.; Electronic Circuits and Devices.; Circuits and Systems.; Nanoscale Science and Technology.; Optical and Electronic Materials.

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully expl...

Πίνακας περιεχομένων:

• Scaling of a MOS Transistor
• Nanoscale Effects- Gate Oxide Leakage Currents
• Nanoscale Effects- Inversion Layer Quantization
• Dielectrics for Nanoelectronics
• Germanium Technology
• Biaxial s-Si Technology
• Uniaxial s-Si Technology
• Alternate MOS Structures
• Graphene Technology.