Bias Temperature Instability for Devices and Circuits

This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability.  Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, ano...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Άλλοι συγγραφείς: Grasser, Tibor (Επιμελητής έκδοσης)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: New York, NY : Springer New York : Imprint: Springer, 2014.
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
LEADER 03065nam a22005175i 4500
001 978-1-4614-7909-3
003 DE-He213
005 20151204162529.0
007 cr nn 008mamaa
008 131022s2014 xxu| s |||| 0|eng d
020 |a 9781461479093  |9 978-1-4614-7909-3 
024 7 |a 10.1007/978-1-4614-7909-3  |2 doi 
040 |d GrThAP 
050 4 |a TK7888.4 
072 7 |a TJFC  |2 bicssc 
072 7 |a TEC008010  |2 bisacsh 
082 0 4 |a 621.3815  |2 23 
245 1 0 |a Bias Temperature Instability for Devices and Circuits  |h [electronic resource] /  |c edited by Tibor Grasser. 
264 1 |a New York, NY :  |b Springer New York :  |b Imprint: Springer,  |c 2014. 
300 |a XI, 810 p. 601 illus., 318 illus. in color.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
505 0 |a Introduction -- Characterization, Experimental Challenges -- Advanced Characterization -- Characterization of Nanoscale Devices -- Statistical Properties/Variability -- Theoretical Understanding -- Possible Defects: Experimental -- Possible Defects: First Principles -- Modeling -- Technological Impact -- Silicon dioxides/SiON -- High-k oxides -- Alternative technologies -- Circuits. 
520 |a This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability.  Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.  ·         Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics; ·         Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence; ·         Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs; ·         Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior. 
650 0 |a Engineering. 
650 0 |a Semiconductors. 
650 0 |a Quality control. 
650 0 |a Reliability. 
650 0 |a Industrial safety. 
650 0 |a Electronics. 
650 0 |a Microelectronics. 
650 0 |a Electronic circuits. 
650 1 4 |a Engineering. 
650 2 4 |a Circuits and Systems. 
650 2 4 |a Semiconductors. 
650 2 4 |a Electronics and Microelectronics, Instrumentation. 
650 2 4 |a Quality Control, Reliability, Safety and Risk. 
700 1 |a Grasser, Tibor.  |e editor. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer eBooks 
776 0 8 |i Printed edition:  |z 9781461479086 
856 4 0 |u http://dx.doi.org/10.1007/978-1-4614-7909-3  |z Full Text via HEAL-Link 
912 |a ZDB-2-ENG 
950 |a Engineering (Springer-11647)