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02542nam a22005175i 4500 |
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978-1-4614-8054-9 |
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DE-He213 |
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20151028131159.0 |
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131018s2014 xxu| s |||| 0|eng d |
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|a 9781461480549
|9 978-1-4614-8054-9
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|a 10.1007/978-1-4614-8054-9
|2 doi
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|d GrThAP
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|a QD551-578
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|a PNRH
|2 bicssc
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|a SCI013050
|2 bisacsh
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|a 541.37
|2 23
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|a Atomic Layer Deposition for Semiconductors
|h [electronic resource] /
|c edited by Choel Seong Hwang.
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|a Boston, MA :
|b Springer US :
|b Imprint: Springer,
|c 2014.
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|a X, 263 p. 170 illus., 81 illus. in color.
|b online resource.
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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|a text file
|b PDF
|2 rda
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|a Introduction -- Precursors and reaction mechanisms -- ALD simulations -- ALD for mass-production memories (DRAM and Flash) -- ALD for emerging memories -- PcRAM -- FeRAM -- Front end of the line process -- Back end of the line -- ALD machines.
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|a Atomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discusses ALD for all modern semiconductor devices, the basic chemistry of ALD, and models of ALD processes. The book also details ALD for both mass produced memories and emerging memories. Each chapter of the book provides history, operating principles, and a full explanation of ALD processes for each device.
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|a Chemistry.
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|a Electrochemistry.
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|a Computer memory systems.
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|a Semiconductors.
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|a Electric power production.
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|a Electronics.
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|a Microelectronics.
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|a Chemistry.
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|a Electrochemistry.
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|a Semiconductors.
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|a Memory Structures.
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|a Energy Technology.
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|a Electronics and Microelectronics, Instrumentation.
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|a Hwang, Choel Seong.
|e editor.
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|a SpringerLink (Online service)
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|t Springer eBooks
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|i Printed edition:
|z 9781461480532
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|u http://dx.doi.org/10.1007/978-1-4614-8054-9
|z Full Text via HEAL-Link
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|a ZDB-2-CMS
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|a Chemistry and Materials Science (Springer-11644)
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