Atomic Layer Deposition for Semiconductors

• Corporate Author: SpringerLink (Online service)
• Other Authors: Hwang, Choel Seong (Editor)
• Format: Electronic eBook
• Language: English
• Published: Boston, MA : Springer US : Imprint: Springer, 2014.
• Subjects: Chemistry.; Electrochemistry.; Computer memory systems.; Semiconductors.; Electric power production.; Electronics.; Microelectronics.; Memory Structures.; Energy Technology.; Electronics and Microelectronics, Instrumentation.

Atomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area  for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discuss...

Table of Contents:

• Introduction
• Precursors and reaction mechanisms
• ALD simulations
• ALD for mass-production memories (DRAM and Flash)
• ALD for emerging memories
• PcRAM
• FeRAM
• Front end of the line process
• Back end of the line
• ALD machines.