Emerging Non-Volatile Memories

• Corporate Author: SpringerLink (Online service)
• Other Authors: Hong, Seungbum (Editor), Auciello, Orlando (Editor), Wouters, Dirk (Editor)
• Format: Electronic eBook
• Language: English
• Published: Boston, MA : Springer US : Imprint: Springer, 2014.
• Subjects: Materials science.; Solid state physics.; Spectroscopy.; Microscopy.; Electrical engineering.; Optical materials.; Electronic materials.; Materials Science.; Optical and Electronic Materials.; Solid State Physics.; Spectroscopy and Microscopy.; Electrical Engineering.

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic...

Table of Contents:

• Part I: Ferroic Memories
• Review of the Science and Technology for Low and High-density Non-volatile Ferroelectric Memories
• Hybrid CMOS/magnetic memories (MRAM) and logic circuits
• Emerging Multi-Ferroic Memories
• Part II: Resistance and Phase Change Memories
• Phase-Change Materials for Data Storage Applications
• Emerging Oxide Resistance Change Memories
• Oxide based memristive nanodevices
• Part III: Probe Memories
• Ferroelectric Probe Storage Devices.