Materials for Information Technology Devices, Interconnects and Packaging /
The fast-developing information technology industry is driving a need for new materials in order to facilitate the development of more reliable microelectronic products. Materials for Information Technology is an up-to-date overview of current developments and R&D activities in the field of mate...
| Συγγραφή απο Οργανισμό/Αρχή: | |
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| Άλλοι συγγραφείς: | , , |
| Μορφή: | Ηλεκτρονική πηγή Ηλ. βιβλίο |
| Γλώσσα: | English |
| Έκδοση: |
London :
Springer London,
2005.
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| Σειρά: | Engineering Materials and Processes,
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| Θέματα: | |
| Διαθέσιμο Online: | Full Text via HEAL-Link |
Πίνακας περιεχομένων:
- Recent Advances in Thin-film Deposition
- Molecular-beam Deposition of High-k Gate Dielectrics for Advanced CMOS
- LEPECVD — A Production Technique for SiGe MOSFETs and MODFETs
- Thin-film Engineering by Atomic-layer Deposition for Ultra-scaled and Novel Devices
- Atomic-layer Deposited Barrier and Seed Layers for Interconnects
- Copper CVD for Conformal Ultrathin-film Deposition
- Pushing PVD to the Limits — Recent Advances
- Surface Engineering Using Self-assembled Monolayers: Model Substrates for Atomic-layer Deposition
- Selective Airgaps: Towards a Scalable Low-k Solution
- Silicides — Recent Advances and Prospects
- TEM Characterization of Strained Silicon
- Material Aspects of Non-Volatile Memories
- An Introduction to Nonvolatile Memory Technology
- Floating-dot Memory Transistors on SOI Substrate
- Ion-beam Synthesis of Nanocrystals for Multidot Memory Structures
- Scaling of Ferroelectric-based Memory Concepts
- Device Concepts with Magnetic Tunnel Junctions
- Phase-change Memories
- Amorphous-to-fcc Transition in GeSbTe Alloys
- Organic Nonvolatile Memories
- Materials for Interconnects
- Interconnect Technology — Today, Recent Advances and a Look into the Future
- Dielectric and Scaling Effects on Electromigration for Cu Interconnects
- Texture and Stress Study of Sub-Micron Copper Interconnect Lines Using X-ray Microdiffraction
- Stress Modeling for Copper Interconnect Structures
- Conductivity Enhancement in Metallization Structures of Regular Grains
- Advanced Barriers for Copper Interconnects
- Synthesis and Characterization of Compounds Obtained by Crosslinking of Polymethylhydrosiloxane by Aromatic Rings
- Revealing the Porous Structure of Low-k Materials Through Solvent Diffusion
- Carbon Nanotube Via Technologies for Future LSI Interconnects
- Nickel Nanowires Obtained by Template Synthesis
- Materials for Assembly/Packaging
- The Importance of Polymers in Wafer-Level Packaging
- Electrically Conductive Adhesives as Solder Alternative: A Feasible Challenge
- The Role of Au/Sn Solder in Packaging
- Packaging Materials: Organic-Inorganic Hybrids for Millimetre-Wave Optoelectronics
- Wafer-Level Three-Dimensional Hyper-Integration Technology Using Dielectric Adhesive Wafer Bonding
- Advanced Materials Characterization
- Challenges to Advanced Materials Characterization for ULSI Applications
- Advanced Material Characterization by TOFSIMS in Microelectronic
- Electronic Properties of the Interface Formed by Pr2O3 Growth on Si(001), Si(111) and SiC(0001) Surfaces
- Materials Characterization by Ellipsometry
- Thermal Desorption Spectrometry as a Method of Analysis for Advanced Interconnect Materials
- Electron Backscatter Diffraction: Application to Cu Interconnects in Top-View and Cross Section
- X-ray Reflectivity Characterisation of Thin-Film and Multilayer Structures.
