Charged Semiconductor Defects Structure, Thermodynamics and Diffusion /

• Κύριοι συγγραφείς: Seebauer, Edmund G. (Συγγραφέας), Kratzer, Meredith C. (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: London : Springer London, 2009.
• Σειρά: Engineering Materials and Processes,
• Θέματα: Physics.; Solid state physics.; Spectroscopy.; Microscopy.; Thermodynamics.; Heat engineering.; Heat transfer.; Mass transfer.; Continuum mechanics.; Electronics.; Microelectronics.; Optical materials.; Electronic materials.; Solid State Physics.; Spectroscopy and Microscopy.; Optical and Electronic Materials.; Continuum Mechanics and Mechanics of Materials.; Electronics and Microelectronics, Instrumentation.; Engineering Thermodynamics, Heat and Mass Transfer.

The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect...

Πίνακας περιεχομένων:

• Fundamentals of Defect Ionization and Transport
• Experimental and Computational Characterization
• Trends in Charged Defect Behavior
• Intrinsic Defects: Structure
• Intrinsic Defects: Ionization Thermodynamics
• Intrinsic Defects: Diffusion
• Extrinsic Defects.