Device Physics, Modeling, Technology, and Analysis for Silicon MESFET

• Κύριοι συγγραφείς: Amiri, Iraj Sadegh (Συγγραφέας, http://id.loc.gov/vocabulary/relators/aut), Mohammadi, Hossein (http://id.loc.gov/vocabulary/relators/aut), Hosseinghadiry, Mahdiar (http://id.loc.gov/vocabulary/relators/aut)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Cham : Springer International Publishing : Imprint: Springer, 2019.
• Έκδοση: 1st ed. 2019.
• Θέματα: Electronic circuits.; Electronics.; Microelectronics.; Circuits and Systems.; Electronic Circuits and Devices.; Electronics and Microelectronics, Instrumentation.
• Φυσική περιγραφή: IX, 122 p. 51 illus., 27 illus. in color. online resource.
• ISBN: 9783030045135
• DOI: 10.1007/978-3-030-04513-5

This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications. Describes the evolution of MESFET in the semiconductor industry; Discusses challenges and solutions associated with downscaling; Provides comprehensive information on the structure and operation of silicon MESFETs.