Device Physics, Modeling, Technology, and Analysis for Silicon MESFET

• Κύριοι συγγραφείς: Amiri, Iraj Sadegh (Συγγραφέας, http://id.loc.gov/vocabulary/relators/aut), Mohammadi, Hossein (http://id.loc.gov/vocabulary/relators/aut), Hosseinghadiry, Mahdiar (http://id.loc.gov/vocabulary/relators/aut)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Cham : Springer International Publishing : Imprint: Springer, 2019.
• Έκδοση: 1st ed. 2019.
• Θέματα: Electronic circuits.; Electronics.; Microelectronics.; Circuits and Systems.; Electronic Circuits and Devices.; Electronics and Microelectronics, Instrumentation.

This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the deriv...

Πίνακας περιεχομένων:

• Chapter 1. Invention and Evaluation of Transistors and Integrated Circuits
• Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET
• Chapter 3. Modeling of Classical SOI-MESFET
• Chapter 4. Design and modeling of triple-material gate SOI-MESFET
• Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET
• Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices
• Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs).