Si Detectors and Characterization for HEP and Photon Science Experiment How to Design Detectors by TCAD Simulation /

This book reviews the HL-LHC experiments and the fourth-generation photon science experiments, discussing the latest radiation hardening techniques, optimization of device & process parameters using TCAD simulation tools, and the experimental characterization required to develop rad-hard Si dete...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριος συγγραφέας: Srivastava, Ajay Kumar (Συγγραφέας, http://id.loc.gov/vocabulary/relators/aut)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Cham : Springer International Publishing : Imprint: Springer, 2019.
Έκδοση:1st ed. 2019.
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
Πίνακας περιεχομένων:
  • Development OF Si DETECTORS FOR THE CMS LHC Experiments
  • Physics and Technology of Si Detectors.-Performance of MCz Si Material for p+nn+ and n+pp+ Si Sensor Design: Status and Development for HL-LHC: Status and Development for HL-LHC
  • Development OF RADIATION HARD PIXEL DETECTORS FOR THE EUROPEAN XFEL
  • T-CAD Simulation for the designing of detectors
  • Development of Radiation Hard p+n Si Pixel Sensors for the European XFEL
  • Analysis & Optimal Design of Radiation Hard p+n Si Pixel Detector for the Next generation Photon Science Experiments
  • CapacitanceS in p+n silicon pixel sensors using 3-D TCAD simulation approach.-CHARACTERIZATION OF SI DETECTORS
  • Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL
  • Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation
  • Appendices.