Si Detectors and Characterization for HEP and Photon Science Experiment How to Design Detectors by TCAD Simulation /
This book reviews the HL-LHC experiments and the fourth-generation photon science experiments, discussing the latest radiation hardening techniques, optimization of device & process parameters using TCAD simulation tools, and the experimental characterization required to develop rad-hard Si dete...
Κύριος συγγραφέας: | |
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Συγγραφή απο Οργανισμό/Αρχή: | |
Μορφή: | Ηλεκτρονική πηγή Ηλ. βιβλίο |
Γλώσσα: | English |
Έκδοση: |
Cham :
Springer International Publishing : Imprint: Springer,
2019.
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Έκδοση: | 1st ed. 2019. |
Θέματα: | |
Διαθέσιμο Online: | Full Text via HEAL-Link |
Πίνακας περιεχομένων:
- Development OF Si DETECTORS FOR THE CMS LHC Experiments
- Physics and Technology of Si Detectors.-Performance of MCz Si Material for p+nn+ and n+pp+ Si Sensor Design: Status and Development for HL-LHC: Status and Development for HL-LHC
- Development OF RADIATION HARD PIXEL DETECTORS FOR THE EUROPEAN XFEL
- T-CAD Simulation for the designing of detectors
- Development of Radiation Hard p+n Si Pixel Sensors for the European XFEL
- Analysis & Optimal Design of Radiation Hard p+n Si Pixel Detector for the Next generation Photon Science Experiments
- CapacitanceS in p+n silicon pixel sensors using 3-D TCAD simulation approach.-CHARACTERIZATION OF SI DETECTORS
- Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL
- Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation
- Appendices.