Simulation of Semiconductor Processes and Devices 2007 SISPAD 2007 /

• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Άλλοι συγγραφείς: Grasser, Tibor (Επιμελητής έκδοσης), Selberherr, Siegfried (Επιμελητής έκδοσης)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Vienna : Springer Vienna, 2007.
• Θέματα: Engineering.; Computer simulation.; Computational intelligence.; Electronics.; Microelectronics.; Optical materials.; Electronic materials.; Nanotechnology.; Electronics and Microelectronics, Instrumentation.; Optical and Electronic Materials.; Computational Intelligence.; Simulation and Modeling.

 The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta­ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec­ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites. 

 Nanomanufacturing Technology and Opportunities Through Physically-Based Simulation -- Atomistic Modeling of Defect Diffusion in SiGe -- Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches -- Molecular Dynamics Modeling of Octadecaborane Implantation into Si -- High Performance, Strained-Ge, Heterostructure p-MOSFETs -- Strain Induced Drain-Current Enhancement Mechanism in Short-Channel Bulk Ge-pMOSFETs with Different Channel and Surface Orientations -- Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs -- Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants -- Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth -- Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D-IC Cu Vias -- Modeling of Re-Sputtering Induced Bridge of Tungsten Bit-Lines for NAND Flash Memory Cell with 37nm Node Technology -- Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT) -- Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment -- Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs -- Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs -- Pearson Effective Potential vs.