Simulation of Semiconductor Processes and Devices 2007 SISPAD 2007 /

The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) he...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Άλλοι συγγραφείς: Grasser, Tibor (Επιμελητής έκδοσης), Selberherr, Siegfried (Επιμελητής έκδοσης)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Vienna : Springer Vienna, 2007.
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
Πίνακας περιεχομένων:
  • Nanomanufacturing Technology and Opportunities Through Physically-Based Simulation
  • Atomistic Modeling of Defect Diffusion in SiGe
  • Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches
  • Molecular Dynamics Modeling of Octadecaborane Implantation into Si
  • High Performance, Strained-Ge, Heterostructure p-MOSFETs
  • Strain Induced Drain-Current Enhancement Mechanism in Short-Channel Bulk Ge-pMOSFETs with Different Channel and Surface Orientations
  • Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs
  • Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants
  • Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth
  • Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D-IC Cu Vias
  • Modeling of Re-Sputtering Induced Bridge of Tungsten Bit-Lines for NAND Flash Memory Cell with 37nm Node Technology
  • Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT)
  • Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment
  • Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs
  • Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs
  • Pearson Effective Potential vs.
  • Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs
  • Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems
  • Energy Conservation in Collisional Broadening
  • A Simple Technique for the Monte Carlo Simulation of Transport in Quantum Wells
  • Upcoming Challenges for Process Modeling
  • Physics-Based Simulation of 1/f Noise in MOSFETs under Large-Signal Operation
  • Thin Body Effects to Suppress Random Dopant Fluctuations in Nano-Scaled MOSFETs
  • ‘Atomistic’ Mesh Generation for the Simulation of Semiconductor Devices
  • Line Edge and Gate Interface Roughness Simulations of Advanced VLSI SOI-MOSFETs
  • Impact of Shear Strain and Quantum Confinement on Channel nMOSFET with High-Stress CESL
  • Analysis of Novel Stress Enhancement Effect Based on Damascene Gate Process with eSiGe S/D for pFETs
  • Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner
  • 3D Stress, Process and Device Simulation: Extraction of the Relevant Stress Tensor
  • Impact of Two-Step Recessed SiGe S/D Engineering for Advanced pMOSFETs of 32 nm Technology Node and Beyond
  • Simulation Study of Multiple FIN FinFET Design for 32nm Technology Node and Beyond
  • Device Design and Scalability of an Impact Ionization MOS Transistor with an Elevated Impact Ionization Region
  • A Prototype Wafer Processing TCAD Tool Composed of BMD Simulation Module, Metal Gettering and Thermal Stress/Slip Functions for Scaled Device Design Phase
  • Compact Modeling of Phase-Change Memories
  • Modeling of NBTI Degradation for SiON pMOSFET
  • Modeling Study of Ultra-Thin Ge Layers Using Tight-Binding, LCBB and kp Methods
  • Analysis of Silicon Dioxide Interface Transition Region in MOS Structures
  • Tunneling Properties of MOS Systems Based on High-k Oxides
  • First-Principles Investigation on Oxide Trapping
  • A Self-Consistent Simulation of InSb Double-Gate MOSFETs Using Full-Band Tight-Binding Approach
  • Influence of Oxygen Composition and Carbon Impurity on Electronic Reliability of HfO2
  • Upcoming Physics Challenges for Device Modeling
  • Transient Characterization of Interface Traps in 4H-SiC MOSFETs
  • Electro-Thermal, Transient, Mixed-Mode 2D Simulation Study of SiC Power Thyristors Operating Under Pulsed-Power Conditions
  • Numerical Design Study on the Optimal p-Emitter Thickness of 4H-SiC Bipolar Diodes
  • Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge Termination Structures
  • Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands
  • Monte Carlo Study on Number of Scattering Events for Quasi-Ballistic Transport in MOSFETs
  • Modeling of Macroscopic Transport Parameters in Inversion Layers
  • Study of the Junction Depth Effect on Ballistic Current Using the Subband Decomposition Method
  • Transport in Silicon Nanowire and Single-Electron Transistors
  • Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets
  • Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors
  • Modeling Carbon Nanotube Electron-Phonon Resonances Shows Terahertz Current Oscillations
  • Crystalline Orientation Effects on Ballistic Hole Current in Ultrathin DG SOI MOSFETs
  • Numerical Simulation of Field Emission in the Surface Conduction Electron-Emitter Display
  • Microscopic Modelling of Quantum Well Solar Cells
  • Monte Carlo Simulation of Time-Dependent Operation of Quantum Cascade Lasers
  • Multiscale Simulation of Electronic and Optoelectronic Devices with TiberCAD
  • Hopping Transport of Electrons via Si-Dot
  • Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method
  • Discontinuous Galerkin Solver for the Semiconductor Boltzmann Equation
  • Modeling of Shock Waves in Two-Dimensional Electron Channels: Effect of Tsunami
  • Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping
  • Electrothermal Monte Carlo Study of Charge Confinement in GaN HFETs
  • Hydrodynamic Modeling of AlGaN/GaN HEMTs
  • Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Grating Field Plates
  • Modelling of Hot Electron Effects in GaN/AlGaN HEMT with AlN Interlayer
  • Compact Modeling for New Transistor Structures
  • Compact Double-Gate MOSFET Model Correctly Predicting Volume-Inversion Effects
  • Modeling NAND Flash Memories for Circuit Simulations
  • Surface-Potential-Based Compact Model for Quantum Effects in Planar and Double-Gate MOSFET
  • Statistical Compact Model Parameter Extraction Strategy for Intrinsic Parameter Fluctuation
  • Calibrated Hydrodynamic Simulation of Deeply-Scaled Well-Tempered Nanowire Field Effect Transistors
  • The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs
  • Monte Carlo Modeling of Schottky Contacts on Semiconducting Carbon Nanotubes
  • Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions
  • A Simplified Quantum Mechanical Model for the Electron Distribution in a Si Nanowire
  • Efficient Green’s Function Algorithms for Atomistic Modeling of Si Nanowire FETs
  • Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter
  • Maxwell Equations on Unstructured Grids Using Finite-Integration Methods
  • Adaptive Time Discretization for a Transient Quantum Drift-Diffusion Model
  • MDS — A New, Highly Extensible Device Simulator
  • Influence of the Poole-Frenkel Effect on Programming and Erasing in Charge Trapping Memories
  • On the Magnetic Field Extraction for On-Chip Inductance Calculation
  • EMC Simulation of THz Emission from Semiconductor Devices
  • Enhanced Band-to-Band Tunneling-Induced-Hot-Electron Injection in P-Channel Flash by SiGe Channel and HfO2 Tunnel Dielectric
  • Challenges in 3D Process Simulation for Advanced Technology Understanding
  • Characteristic Fluctuation Dependence on Discrete Dopant for 16nm SOI FinFETs at Different Temperature
  • Hot-Carrier Behaviour of a 0.35 µm High-Voltage n-Channel LDMOS Transistor
  • Dynamic Monte Carlo Simulation of an Amorphous Organic Device
  • Charge Injection Model in Organic Light-Emitting Diodes Based on a Master Equation
  • Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors
  • Analysis of Process-Geometry Modulations through 3D TCAD
  • Asymmetrical Triple-Gate FET
  • Process Variation-A ware Estimation of Static Leakage Power in Nano CMOS
  • The Optimization of Low Power Operation SRAM Circuit for 32nm Node
  • Device Design Evaluation of Multigate FETs Using Full 3D Process and Device TCAD Simulation
  • Modeling and Extraction of Effective Lateral Doping Profile Using the Relation of On-Resistance vs. Overlap Capacitance in (100) and (110)-Oriented MOSFETs
  • Molecular Orbital Examination of Negative-Bias Temperature Instability Mechanism
  • Process Margin Analysis and Yield Enhancement Through Statistical Topography Simulation
  • Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation
  • Strained Contact Etch Stop Layer Integration: Geometry Design Impact
  • Modeling of Deposition During C5F8/CO/O2/Ar Plasma Etching Using Topography and Composition Simulation
  • Ab Initio Calculations of the Transport Through Single Molecules and Carbon Nanotubes
  • Three-Dimensional Sacrificial Etching
  • Atomistic study of Metal/High-K interface
  • Ab-Initio Calculations of Indium Migration in Uniaxial Strained Silicon
  • Noise Simulation of Nanoscale Devices Based on the Non-Equilibrium Green’s Function Formalism
  • RDF Analysis of Small-Signal Equivalent Circuit Parameters in MOSFET Devices.