Simulation of Semiconductor Processes and Devices 2007 SISPAD 2007 /
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) he...
| Συγγραφή απο Οργανισμό/Αρχή: | |
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| Άλλοι συγγραφείς: | , |
| Μορφή: | Ηλεκτρονική πηγή Ηλ. βιβλίο |
| Γλώσσα: | English |
| Έκδοση: |
Vienna :
Springer Vienna,
2007.
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| Θέματα: | |
| Διαθέσιμο Online: | Full Text via HEAL-Link |
Πίνακας περιεχομένων:
- Nanomanufacturing Technology and Opportunities Through Physically-Based Simulation
- Atomistic Modeling of Defect Diffusion in SiGe
- Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches
- Molecular Dynamics Modeling of Octadecaborane Implantation into Si
- High Performance, Strained-Ge, Heterostructure p-MOSFETs
- Strain Induced Drain-Current Enhancement Mechanism in Short-Channel Bulk Ge-pMOSFETs with Different Channel and Surface Orientations
- Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs
- Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants
- Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth
- Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D-IC Cu Vias
- Modeling of Re-Sputtering Induced Bridge of Tungsten Bit-Lines for NAND Flash Memory Cell with 37nm Node Technology
- Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT)
- Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment
- Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs
- Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs
- Pearson Effective Potential vs.
- Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs
- Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems
- Energy Conservation in Collisional Broadening
- A Simple Technique for the Monte Carlo Simulation of Transport in Quantum Wells
- Upcoming Challenges for Process Modeling
- Physics-Based Simulation of 1/f Noise in MOSFETs under Large-Signal Operation
- Thin Body Effects to Suppress Random Dopant Fluctuations in Nano-Scaled MOSFETs
- ‘Atomistic’ Mesh Generation for the Simulation of Semiconductor Devices
- Line Edge and Gate Interface Roughness Simulations of Advanced VLSI SOI-MOSFETs
- Impact of Shear Strain and Quantum Confinement on Channel nMOSFET with High-Stress CESL
- Analysis of Novel Stress Enhancement Effect Based on Damascene Gate Process with eSiGe S/D for pFETs
- Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner
- 3D Stress, Process and Device Simulation: Extraction of the Relevant Stress Tensor
- Impact of Two-Step Recessed SiGe S/D Engineering for Advanced pMOSFETs of 32 nm Technology Node and Beyond
- Simulation Study of Multiple FIN FinFET Design for 32nm Technology Node and Beyond
- Device Design and Scalability of an Impact Ionization MOS Transistor with an Elevated Impact Ionization Region
- A Prototype Wafer Processing TCAD Tool Composed of BMD Simulation Module, Metal Gettering and Thermal Stress/Slip Functions for Scaled Device Design Phase
- Compact Modeling of Phase-Change Memories
- Modeling of NBTI Degradation for SiON pMOSFET
- Modeling Study of Ultra-Thin Ge Layers Using Tight-Binding, LCBB and kp Methods
- Analysis of Silicon Dioxide Interface Transition Region in MOS Structures
- Tunneling Properties of MOS Systems Based on High-k Oxides
- First-Principles Investigation on Oxide Trapping
- A Self-Consistent Simulation of InSb Double-Gate MOSFETs Using Full-Band Tight-Binding Approach
- Influence of Oxygen Composition and Carbon Impurity on Electronic Reliability of HfO2
- Upcoming Physics Challenges for Device Modeling
- Transient Characterization of Interface Traps in 4H-SiC MOSFETs
- Electro-Thermal, Transient, Mixed-Mode 2D Simulation Study of SiC Power Thyristors Operating Under Pulsed-Power Conditions
- Numerical Design Study on the Optimal p-Emitter Thickness of 4H-SiC Bipolar Diodes
- Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge Termination Structures
- Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands
- Monte Carlo Study on Number of Scattering Events for Quasi-Ballistic Transport in MOSFETs
- Modeling of Macroscopic Transport Parameters in Inversion Layers
- Study of the Junction Depth Effect on Ballistic Current Using the Subband Decomposition Method
- Transport in Silicon Nanowire and Single-Electron Transistors
- Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets
- Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors
- Modeling Carbon Nanotube Electron-Phonon Resonances Shows Terahertz Current Oscillations
- Crystalline Orientation Effects on Ballistic Hole Current in Ultrathin DG SOI MOSFETs
- Numerical Simulation of Field Emission in the Surface Conduction Electron-Emitter Display
- Microscopic Modelling of Quantum Well Solar Cells
- Monte Carlo Simulation of Time-Dependent Operation of Quantum Cascade Lasers
- Multiscale Simulation of Electronic and Optoelectronic Devices with TiberCAD
- Hopping Transport of Electrons via Si-Dot
- Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method
- Discontinuous Galerkin Solver for the Semiconductor Boltzmann Equation
- Modeling of Shock Waves in Two-Dimensional Electron Channels: Effect of Tsunami
- Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping
- Electrothermal Monte Carlo Study of Charge Confinement in GaN HFETs
- Hydrodynamic Modeling of AlGaN/GaN HEMTs
- Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Grating Field Plates
- Modelling of Hot Electron Effects in GaN/AlGaN HEMT with AlN Interlayer
- Compact Modeling for New Transistor Structures
- Compact Double-Gate MOSFET Model Correctly Predicting Volume-Inversion Effects
- Modeling NAND Flash Memories for Circuit Simulations
- Surface-Potential-Based Compact Model for Quantum Effects in Planar and Double-Gate MOSFET
- Statistical Compact Model Parameter Extraction Strategy for Intrinsic Parameter Fluctuation
- Calibrated Hydrodynamic Simulation of Deeply-Scaled Well-Tempered Nanowire Field Effect Transistors
- The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs
- Monte Carlo Modeling of Schottky Contacts on Semiconducting Carbon Nanotubes
- Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions
- A Simplified Quantum Mechanical Model for the Electron Distribution in a Si Nanowire
- Efficient Green’s Function Algorithms for Atomistic Modeling of Si Nanowire FETs
- Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter
- Maxwell Equations on Unstructured Grids Using Finite-Integration Methods
- Adaptive Time Discretization for a Transient Quantum Drift-Diffusion Model
- MDS — A New, Highly Extensible Device Simulator
- Influence of the Poole-Frenkel Effect on Programming and Erasing in Charge Trapping Memories
- On the Magnetic Field Extraction for On-Chip Inductance Calculation
- EMC Simulation of THz Emission from Semiconductor Devices
- Enhanced Band-to-Band Tunneling-Induced-Hot-Electron Injection in P-Channel Flash by SiGe Channel and HfO2 Tunnel Dielectric
- Challenges in 3D Process Simulation for Advanced Technology Understanding
- Characteristic Fluctuation Dependence on Discrete Dopant for 16nm SOI FinFETs at Different Temperature
- Hot-Carrier Behaviour of a 0.35 µm High-Voltage n-Channel LDMOS Transistor
- Dynamic Monte Carlo Simulation of an Amorphous Organic Device
- Charge Injection Model in Organic Light-Emitting Diodes Based on a Master Equation
- Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors
- Analysis of Process-Geometry Modulations through 3D TCAD
- Asymmetrical Triple-Gate FET
- Process Variation-A ware Estimation of Static Leakage Power in Nano CMOS
- The Optimization of Low Power Operation SRAM Circuit for 32nm Node
- Device Design Evaluation of Multigate FETs Using Full 3D Process and Device TCAD Simulation
- Modeling and Extraction of Effective Lateral Doping Profile Using the Relation of On-Resistance vs. Overlap Capacitance in (100) and (110)-Oriented MOSFETs
- Molecular Orbital Examination of Negative-Bias Temperature Instability Mechanism
- Process Margin Analysis and Yield Enhancement Through Statistical Topography Simulation
- Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation
- Strained Contact Etch Stop Layer Integration: Geometry Design Impact
- Modeling of Deposition During C5F8/CO/O2/Ar Plasma Etching Using Topography and Composition Simulation
- Ab Initio Calculations of the Transport Through Single Molecules and Carbon Nanotubes
- Three-Dimensional Sacrificial Etching
- Atomistic study of Metal/High-K interface
- Ab-Initio Calculations of Indium Migration in Uniaxial Strained Silicon
- Noise Simulation of Nanoscale Devices Based on the Non-Equilibrium Green’s Function Formalism
- RDF Analysis of Small-Signal Equivalent Circuit Parameters in MOSFET Devices.
