MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

• Κύριοι συγγραφείς: Srivastava, Viranjay M. (Συγγραφέας), Singh, Ghanshyam (Συγγραφέας)
• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Cham : Springer International Publishing : Imprint: Springer, 2014.
• Σειρά: Analog Circuits and Signal Processing, 122
• Θέματα: Engineering.; Semiconductors.; Electrical engineering.; Electronic circuits.; Circuits and Systems.; Communications Engineering, Networks.
• Φυσική περιγραφή: XV, 199 p. 55 illus., 45 illus. in color. online resource.
• ISBN: 9783319011653
• ISSN: 1872-082X ;

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  ·         Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; ·         Explains the design of RF switches using the technologies presented and simulates switches; ·         Verifies parameters and discusses feasibility of devices and switches.