Ferroelectric Domain Walls Statics, Dynamics, and Functionalities Revealed by Atomic Force Microscopy /

Using the nanometric resolution of atomic force microscopy techniques, this work explores the rich fundamental physics and novel functionalities of domain walls in ferroelectric materials, the nanoscale interfaces separating regions of differently oriented spontaneous polarization. Due to the local...

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Bibliographic Details
Main Author: Guyonnet, Jill (Author)
Corporate Author: SpringerLink (Online service)
Format: Electronic eBook
Language:English
Published: Cham : Springer International Publishing : Imprint: Springer, 2014.
Series:Springer Theses, Recognizing Outstanding Ph.D. Research,
Subjects:
Online Access:Full Text via HEAL-Link
Description
Summary:Using the nanometric resolution of atomic force microscopy techniques, this work explores the rich fundamental physics and novel functionalities of domain walls in ferroelectric materials, the nanoscale interfaces separating regions of differently oriented spontaneous polarization. Due to the local symmetry-breaking caused by the change in polarization, domain walls are found to possess an unexpected lateral piezoelectric response, even when this is symmetry-forbidden in the parent material. This has interesting potential applications in electromechanical devices based on ferroelectric domain patterning. Moreover, electrical conduction is shown to arise at domain walls in otherwise insulating lead zirconate titanate, the first such observation outside of multiferroic bismuth ferrite, due to the tendency of the walls to localize defects. The role of defects is then explored in the theoretical framework of disordered elastic interfaces possessing a characteristic roughness scaling and complex dynamic response. It is shown that the heterogeneous disorder landscape in ferroelectric thin films leads to a breakdown of the usual self-affine roughness, possibly related to strong pinning at individual defects. Finally, the roles of varying environmental conditions and defect densities in domain switching are explored, and shown to be adequately modelled as a competition between screening effects and pinning.
Physical Description:XV, 159 p. 96 illus., 17 illus. in color. online resource.
ISBN:9783319057507
ISSN:2190-5053