Arbitrary Modeling of TSVs for 3D Integrated Circuits

This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance, and nearby contact effects.  Readers will benefit from in-depth...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς: Salah, Khaled (Συγγραφέας), Ismail, Yehea (Συγγραφέας), El-Rouby, Alaa (Συγγραφέας)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Cham : Springer International Publishing : Imprint: Springer, 2015.
Σειρά:Analog Circuits and Signal Processing,
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
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020 |a 9783319076119  |9 978-3-319-07611-9 
024 7 |a 10.1007/978-3-319-07611-9  |2 doi 
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082 0 4 |a 621.3815  |2 23 
100 1 |a Salah, Khaled.  |e author. 
245 1 0 |a Arbitrary Modeling of TSVs for 3D Integrated Circuits  |h [electronic resource] /  |c by Khaled Salah, Yehea Ismail, Alaa El-Rouby. 
264 1 |a Cham :  |b Springer International Publishing :  |b Imprint: Springer,  |c 2015. 
300 |a IX, 179 p. 159 illus., 99 illus. in color.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
347 |a text file  |b PDF  |2 rda 
490 1 |a Analog Circuits and Signal Processing,  |x 1872-082X 
505 0 |a Introduction: Work around Moore’s Law -- 3D/TSV Enabling Technologies -- TSV Modeling and Analysis -- TSV Verification -- TSV Macro-Modeling Framework -- TSV Design Applications: TSV-Based On-Chip Spiral Inductor, TSV-Based On-Chip Wireless Communications and TSV-Based Bandpass Filter -- Imperfection in TSV Modeling -- New Trends in TSV -- TSV Fabrication -- Conclusions. 
520 |a This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance, and nearby contact effects.  Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis, and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor,  and inductive-based communication system, and bandpass filtering. ·Introduces a robust model that captures accurately all the loss modes of a TSV,  coupling parasitics between TSVs and the TSV nonlinear capacitance and resistance of the depletion region; ·Enables readers to use a model which is technology dependent and can be used for any TSV configuration; ·Reveals a novel on-chip wireless communication technique, based on TSV spiral inductors; ·Equips readers for fast parasitic extraction of TSVs for 3D IC design. 
650 0 |a Engineering. 
650 0 |a Microprocessors. 
650 0 |a Electronics. 
650 0 |a Microelectronics. 
650 0 |a Electronic circuits. 
650 1 4 |a Engineering. 
650 2 4 |a Circuits and Systems. 
650 2 4 |a Electronics and Microelectronics, Instrumentation. 
650 2 4 |a Processor Architectures. 
700 1 |a Ismail, Yehea.  |e author. 
700 1 |a El-Rouby, Alaa.  |e author. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer eBooks 
776 0 8 |i Printed edition:  |z 9783319076102 
830 0 |a Analog Circuits and Signal Processing,  |x 1872-082X 
856 4 0 |u http://dx.doi.org/10.1007/978-3-319-07611-9  |z Full Text via HEAL-Link 
912 |a ZDB-2-ENG 
950 |a Engineering (Springer-11647)