Dispersion Relations in Heavily-Doped Nanostructures
This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic qua...
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Συγγραφή απο Οργανισμό/Αρχή: | |
Μορφή: | Ηλεκτρονική πηγή Ηλ. βιβλίο |
Γλώσσα: | English |
Έκδοση: |
Cham :
Springer International Publishing : Imprint: Springer,
2016.
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Έκδοση: | 1st ed. 2016. |
Σειρά: | Springer Tracts in Modern Physics,
265 |
Θέματα: | |
Διαθέσιμο Online: | Full Text via HEAL-Link |
Πίνακας περιεχομένων:
- From the Contents: The DR in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors
- The DR in Nano-Wires (NWs) of Heavily Doped (HD) Non-Parabolic Semiconductors
- The DR in Quantum Box (QB) of Heavily Doped (HD) Non-Parabolic Semiconductors
- The DR in doping superlattices of HD Non-Parabolic Semiconductors
- The DR in Accumulation and Inversion Layers of Non-Parabolic Semiconductors.