Power GaN Devices Materials, Applications and Reliability /

• Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
• Άλλοι συγγραφείς: Meneghini, Matteo (Επιμελητής έκδοσης), Meneghesso, Gaudenzio (Επιμελητής έκδοσης), Zanoni, Enrico (Επιμελητής έκδοσης)
• Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
• Γλώσσα: English
• Έκδοση: Cham : Springer International Publishing : Imprint: Springer, 2017.
• Σειρά: Power Electronics and Power Systems,
• Θέματα: Engineering.; Energy systems.; Semiconductors.; Electronics.; Microelectronics.; Power electronics.; Optical materials.; Electronic materials.; Power Electronics, Electrical Machines and Networks.; Optical and Electronic Materials.; Energy Systems.; Electronics and Microelectronics, Instrumentation.

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power trans...

Πίνακας περιεχομένων:

• 1 Properties and advantages of gallium nitride; Daisuke Ueda
• 2 Substrate issues and epitaxial growth; Stacia Keller
• 3 GaN-on-Silicon CMOS compatible process; Denis Marcon
• 4 Lateral GaN-based power devices; Umesh Mishra
• 5 GaN-based vertical transistors; Srabanti Chowduri
• 6 GaN-based nanowire transistors; Tomas Palacios
• 7 Deep level characterization: electrical and optical methods; Robert Kaplar
• 8 Modeling of GaN HEMTs: from device-level simulation to virtual prototyping; Gilberto Curatola, Giovanni Verzellesi
• 9 Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities; Bisi, Rossetto, De Santi, Meneghini, Meneghesso, Zanoni
• 10 Cascode configuration for normally-off devices; Primit Parikh
• 11 Gate injection transistors: E-mode operation and conductivity modulation; Tetsuso Ueda
• 12 Fluorine implanted E-mode transistors; Kevin Chen
• 13 Drift effects in GaN HV power transistors; Joachim Wuerfl
• 14 Reliability Aspects of 650V rated GaN Power Devices; P. Moens, A. Banerjee
• 15 Switching Characteristics of Gallium-Nitride Transistors: system level issues; Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu.