Energy-Level Control at Hybrid Inorganic/Organic Semiconductor Interfaces

This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolaye...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριος συγγραφέας: Schlesinger, Raphael (Συγγραφέας)
Συγγραφή απο Οργανισμό/Αρχή: SpringerLink (Online service)
Μορφή: Ηλεκτρονική πηγή Ηλ. βιβλίο
Γλώσσα:English
Έκδοση: Cham : Springer International Publishing : Imprint: Springer, 2017.
Σειρά:Springer Theses, Recognizing Outstanding Ph.D. Research,
Θέματα:
Διαθέσιμο Online:Full Text via HEAL-Link
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100 1 |a Schlesinger, Raphael.  |e author. 
245 1 0 |a Energy-Level Control at Hybrid Inorganic/Organic Semiconductor Interfaces  |h [electronic resource] /  |c by Raphael Schlesinger. 
264 1 |a Cham :  |b Springer International Publishing :  |b Imprint: Springer,  |c 2017. 
300 |a XVIII, 211 p. 88 illus., 52 illus. in color.  |b online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
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490 1 |a Springer Theses, Recognizing Outstanding Ph.D. Research,  |x 2190-5053 
505 0 |a Introduction -- Fundamentals -- Theory of Experimental Methods -- Methodology and Experimental Setups -- Results and Discussion -- Conclusion. . 
520 |a This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices. . 
650 0 |a Physics. 
650 0 |a Semiconductors. 
650 0 |a Surfaces (Physics). 
650 0 |a Interfaces (Physical sciences). 
650 0 |a Thin films. 
650 0 |a Spectroscopy. 
650 0 |a Microscopy. 
650 0 |a Optical materials. 
650 0 |a Electronic materials. 
650 1 4 |a Physics. 
650 2 4 |a Surface and Interface Science, Thin Films. 
650 2 4 |a Optical and Electronic Materials. 
650 2 4 |a Spectroscopy and Microscopy. 
650 2 4 |a Semiconductors. 
710 2 |a SpringerLink (Online service) 
773 0 |t Springer eBooks 
776 0 8 |i Printed edition:  |z 9783319466231 
830 0 |a Springer Theses, Recognizing Outstanding Ph.D. Research,  |x 2190-5053 
856 4 0 |u http://dx.doi.org/10.1007/978-3-319-46624-8  |z Full Text via HEAL-Link 
912 |a ZDB-2-PHA 
950 |a Physics and Astronomy (Springer-11651)